This paper discusses the application of soft x-ray emission and resonant inelastic x-ray scattering as probes of the electronic structure of transition metal oxides. The results of studies on the narrow gap insulator CdO, and the Mott-Hubbard oxide Cr-doped V2O3, are reported. The O 2p valence band partial density of states for CdO has been measured, and emission due to the hybridization of the O 2p valence band states with Cd 4d shallow core level has been observed. For Cr-doped V2O3, the temperature induced metal-insulator transition in samples with 1.5% Cr was observed using soft x-ray emission, and both charge transfer and dipole forbidden d-d excitations were observed using resonant inelastic x-ray scattering.
|Number of pages||10|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 2003|