Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N

Kevin E. Smith*, Laurent C. Duda, Cristian B. Stagarescu, James Downes, Dimitris Korakakis, Raj Singh, Theodore D. Moustakas, Jinghua Guo, Joseph Nordgren

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. The shift in energy of the valence band maximum as x varies from 0 to 1 in AlxGa1-xN was measured by recording N K-emission spectra, and found to be linear. Furthermore, N K-emission spectra revealed resonantlike hybridization of N 2p and Ga 3d states at 19 eV below the GaN valence band maximum. The spectral intensity of this feature is proportional to Ga content.

Original languageEnglish
Pages (from-to)2250-2253
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
Publication statusPublished - Jul 1998
Externally publishedYes

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