TY - JOUR
T1 - Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N
AU - Smith, Kevin E.
AU - Duda, Laurent C.
AU - Stagarescu, Cristian B.
AU - Downes, James
AU - Korakakis, Dimitris
AU - Singh, Raj
AU - Moustakas, Theodore D.
AU - Guo, Jinghua
AU - Nordgren, Joseph
PY - 1998/7
Y1 - 1998/7
N2 - The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. The shift in energy of the valence band maximum as x varies from 0 to 1 in AlxGa1-xN was measured by recording N K-emission spectra, and found to be linear. Furthermore, N K-emission spectra revealed resonantlike hybridization of N 2p and Ga 3d states at 19 eV below the GaN valence band maximum. The spectral intensity of this feature is proportional to Ga content.
AB - The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. The shift in energy of the valence band maximum as x varies from 0 to 1 in AlxGa1-xN was measured by recording N K-emission spectra, and found to be linear. Furthermore, N K-emission spectra revealed resonantlike hybridization of N 2p and Ga 3d states at 19 eV below the GaN valence band maximum. The spectral intensity of this feature is proportional to Ga content.
UR - http://www.scopus.com/inward/record.url?scp=11644256531&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:11644256531
VL - 16
SP - 2250
EP - 2253
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -