Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N

Kevin E. Smith; Laurent C. Duda; Cristian B. Stagarescu; James Downes; Dimitris Korakakis; Raj Singh; Theodore D. Moustakas; Jinghua Guo; Joseph Nordgren

Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N

Kevin E. Smith^*, Laurent C. Duda, Cristian B. Stagarescu, James Downes, Dimitris Korakakis, Raj Singh, Theodore D. Moustakas, Jinghua Guo, Joseph Nordgren

^*Corresponding author for this work

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

The electronic structure of wurtzite GaN, Al_0.5Ga_0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. The shift in energy of the valence band maximum as x varies from 0 to 1 in Al_xGa_1-xN was measured by recording N K-emission spectra, and found to be linear. Furthermore, N K-emission spectra revealed resonantlike hybridization of N 2p and Ga 3d states at 19 eV below the GaN valence band maximum. The spectral intensity of this feature is proportional to Ga content.

Original language	English
Pages (from-to)	2250-2253
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	4
Publication status	Published - Jul 1998
Externally published	Yes

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Smith, Kevin E. ; Duda, Laurent C. ; Stagarescu, Cristian B. ; Downes, James ; Korakakis, Dimitris ; Singh, Raj ; Moustakas, Theodore D. ; Guo, Jinghua ; Nordgren, Joseph. / Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 ; Vol. 16, No. 4. pp. 2250-2253.

@article{1bd6d35cd845406b9c980d9fc602bbfa,

title = "Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N",

abstract = "The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. The shift in energy of the valence band maximum as x varies from 0 to 1 in AlxGa1-xN was measured by recording N K-emission spectra, and found to be linear. Furthermore, N K-emission spectra revealed resonantlike hybridization of N 2p and Ga 3d states at 19 eV below the GaN valence band maximum. The spectral intensity of this feature is proportional to Ga content.",

author = "Smith, {Kevin E.} and Duda, {Laurent C.} and Stagarescu, {Cristian B.} and James Downes and Dimitris Korakakis and Raj Singh and Moustakas, {Theodore D.} and Jinghua Guo and Joseph Nordgren",

year = "1998",

month = "7",

language = "English",

volume = "16",

pages = "2250--2253",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N. / Smith, Kevin E.; Duda, Laurent C.; Stagarescu, Cristian B.; Downes, James; Korakakis, Dimitris; Singh, Raj; Moustakas, Theodore D.; Guo, Jinghua; Nordgren, Joseph.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 4, 07.1998, p. 2250-2253.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N

AU - Smith, Kevin E.

AU - Duda, Laurent C.

AU - Stagarescu, Cristian B.

AU - Downes, James

AU - Korakakis, Dimitris

AU - Singh, Raj

AU - Moustakas, Theodore D.

AU - Guo, Jinghua

AU - Nordgren, Joseph

PY - 1998/7

Y1 - 1998/7

N2 - The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. The shift in energy of the valence band maximum as x varies from 0 to 1 in AlxGa1-xN was measured by recording N K-emission spectra, and found to be linear. Furthermore, N K-emission spectra revealed resonantlike hybridization of N 2p and Ga 3d states at 19 eV below the GaN valence band maximum. The spectral intensity of this feature is proportional to Ga content.

AB - The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. The shift in energy of the valence band maximum as x varies from 0 to 1 in AlxGa1-xN was measured by recording N K-emission spectra, and found to be linear. Furthermore, N K-emission spectra revealed resonantlike hybridization of N 2p and Ga 3d states at 19 eV below the GaN valence band maximum. The spectral intensity of this feature is proportional to Ga content.

UR - http://www.scopus.com/inward/record.url?scp=11644256531&partnerID=8YFLogxK

M3 - Article

VL - 16

SP - 2250

EP - 2253

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -