TY - GEN
T1 - Soldered hot-via E-band and W-band power amplifier MMICs for millimeter-wave chip scale packaging
AU - Bessemoulin, Alexandre
AU - Rodriguez, Melissa C.
AU - Mahon, Simon J.
AU - Parker, Anthony E.
AU - Heimlich, Michael C.
PY - 2016/8/9
Y1 - 2016/8/9
N2 - Novel and realistic application of hot-via interconnects to millimeter-wave active and power MMICs is demonstrated for the first time. Power amplifier MMICs in the 80- and 100-GHz range were successfully designed, assembled, and characterized for wire-bond free chip interconnect technology. With hot-via RF transitions, compact E-band power amplifier MMICs directly soldered onto evaluation boards demonstrate 22-dB gain and over 28-dBm output power in the ETSI band of 81-86 GHz, with little performance degradation compared to reference circuits probed with traditional front-side RF pads. Similarly, a broadband amplifier, when interconnected to its matching PCB, delivers 13-dB of gain in the W-band, and 21-dBm P1dB. To the author's knowledge, this work represents the highest frequency demonstration of any soldered millimeter-wave hot-via active circuits onto standard PCBs, with remarkable measured power performance, closely equaling that of ideally front-side RF probed PA MMICs.
AB - Novel and realistic application of hot-via interconnects to millimeter-wave active and power MMICs is demonstrated for the first time. Power amplifier MMICs in the 80- and 100-GHz range were successfully designed, assembled, and characterized for wire-bond free chip interconnect technology. With hot-via RF transitions, compact E-band power amplifier MMICs directly soldered onto evaluation boards demonstrate 22-dB gain and over 28-dBm output power in the ETSI band of 81-86 GHz, with little performance degradation compared to reference circuits probed with traditional front-side RF pads. Similarly, a broadband amplifier, when interconnected to its matching PCB, delivers 13-dB of gain in the W-band, and 21-dBm P1dB. To the author's knowledge, this work represents the highest frequency demonstration of any soldered millimeter-wave hot-via active circuits onto standard PCBs, with remarkable measured power performance, closely equaling that of ideally front-side RF probed PA MMICs.
UR - http://www.scopus.com/inward/record.url?scp=84984984889&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2016.7540025
DO - 10.1109/MWSYM.2016.7540025
M3 - Conference proceeding contribution
AN - SCOPUS:84984984889
VL - 2016-August
T3 - IEEE MTT-S International Microwave Symposium
SP - 1
EP - 4
BT - 2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - IEEE MTT-S International Microwave Symposium (IMS)
Y2 - 22 May 2016 through 27 May 2016
ER -