Solution-processed, silver-doped NiOx as hole transporting layer for high-efficiency inverted perovskite solar cells

Jianghui Zheng, Long Hu, Jae S. Yun, Meng Zhang, Cho Fai Jonathan Lau, Jueming Bing, Xiaofan Deng, Qingshan Ma, Yongyoon Cho, Weifei Fu, Chao Chen*, Martin A. Green, Shujuan Huang, Anita W. Y. Ho-Baillie

*Corresponding author for this work

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

NiOx is as a promising hole transporting layer (HTL) for perovskite solar cells (PSCs) due to its good stability, large bandgap, and deep valence band. The use of NiOx as a HTL for "inverted" PSC as part of a monolithic silicon/perovskite tandem solar cell is also suitable when the processing temperature is suitably low. Solution-processed NiOx at low temperature for PSCs remains to be improved due to the relatively low short-circuit current density (Jsc) and fill factor (FF) of reported devices. In this work, the use of Ag-doping is reported for solution-processed NiOx film at 300 °C for inverted planar PSCs. We have shown that Ag-doping has no negative effect on the optical transmittance and morphology of the NiOx film and the overlying perovskite film. In addition, Ag-doping is effective in improving conductivity, improving carrier extraction, and enhancing the p-type property of the NiOx film confirmed by electrical characterization, photoluminescence measurements, and ultraviolet photoelectron spectroscopy. These improvements result in better devices based on the ITO/Ag:NiOx/CH3NH3PbI3/PCBM/BCP/Ag structure with improved average FF (from 69% to 75%), enhanced average JSC (by 1.2 mA/cm2 absolute) and enhanced average VOC (by 29 mV absolute). The average efficiency of these devices is 16.3% while the best device achieves a PCE of 17.3% with negligible hysteresis and a stabilized efficiency of 17.1%. In comparison, devices that use undoped NiOx have an average efficiency of 13.5%. This work demonstrates that silver is a promising doping material for NiOx by a simple solution process for high-performance inverted PSCs and perovskite tandems.

Original languageEnglish
Pages (from-to)561-570
Number of pages10
JournalACS Applied Energy Materials
Volume1
Issue number2
DOIs
Publication statusPublished - 26 Feb 2018
Externally publishedYes

Keywords

  • hole transport layer
  • NiOx
  • Ag-doped NiOx
  • perovskite solar cells
  • inverted structure

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