Spatial fluctuations and localisation effects in optical characteristics of p-doped GaN films

Ewa Goldys, Mick Godlewski, Eliana Kaminska, Anna Piotrowska, Scott Butcher

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We report the observation of several intense satellite lines in the emission of p-GaN excited at 325 nm with separations suggesting a multiple LO phonon-related process. The observed phenomenon is interpreted as hot exciton luminescence enhanced by potential fluctuations and localisation. Using optically detected magnetic resonance and photoluminescence kinetics we explore the compensation processes underpinning these localisation effects.

Original languageEnglish
Pages (from-to)365-369
Number of pages5
JournalPhysica Status Solidi B: Basic Solid State Physics
Issue number2
Publication statusPublished - Nov 2001
Event4th International Conference on Nitride Semiconductors (ICNS-4) - DENVER
Duration: 16 Jul 200120 Jul 2001


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