We report the observation of several intense satellite lines in the emission of p-GaN excited at 325 nm with separations suggesting a multiple LO phonon-related process. The observed phenomenon is interpreted as hot exciton luminescence enhanced by potential fluctuations and localisation. Using optically detected magnetic resonance and photoluminescence kinetics we explore the compensation processes underpinning these localisation effects.
|Number of pages||5|
|Journal||Physica Status Solidi B: Basic Solid State Physics|
|Publication status||Published - Nov 2001|
|Event||4th International Conference on Nitride Semiconductors (ICNS-4) - DENVER|
Duration: 16 Jul 2001 → 20 Jul 2001