Spatial fluctuations and localisation effects in optical characteristics of p-doped GaN films

Ewa Goldys; Mick Godlewski; Eliana Kaminska; Anna Piotrowska; Scott Butcher

Spatial fluctuations and localisation effects in optical characteristics of p-doped GaN films

Ewa Goldys, Mick Godlewski, Eliana Kaminska, Anna Piotrowska, Scott Butcher

Macquarie University

Research output: Contribution to journal › Article › peer-review

Abstract

We report the observation of several intense satellite lines in the emission of p-GaN excited at 325 nm with separations suggesting a multiple LO phonon-related process. The observed phenomenon is interpreted as hot exciton luminescence enhanced by potential fluctuations and localisation. Using optically detected magnetic resonance and photoluminescence kinetics we explore the compensation processes underpinning these localisation effects.

Original language	English
Pages (from-to)	365-369
Number of pages	5
Journal	Physica Status Solidi B: Basic Solid State Physics
Volume	228
Issue number	2
Publication status	Published - Nov 2001
Event	4th International Conference on Nitride Semiconductors (ICNS-4) - DENVER Duration: 16 Jul 2001 → 20 Jul 2001

Keywords

PHOTOLUMINESCENCE
MG

Cite this

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title = "Spatial fluctuations and localisation effects in optical characteristics of p-doped GaN films",

abstract = "We report the observation of several intense satellite lines in the emission of p-GaN excited at 325 nm with separations suggesting a multiple LO phonon-related process. The observed phenomenon is interpreted as hot exciton luminescence enhanced by potential fluctuations and localisation. Using optically detected magnetic resonance and photoluminescence kinetics we explore the compensation processes underpinning these localisation effects.",

keywords = "PHOTOLUMINESCENCE, MG",

author = "Ewa Goldys and Mick Godlewski and Eliana Kaminska and Anna Piotrowska and Scott Butcher",

year = "2001",

month = nov,

language = "English",

volume = "228",

pages = "365--369",

journal = "Physica Status Solidi B: Basic Solid State Physics",

issn = "0370-1972",

publisher = "Wiley-VCH, Wiley",

number = "2",

note = "4th International Conference on Nitride Semiconductors (ICNS-4) ; Conference date: 16-07-2001 Through 20-07-2001",

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TY - JOUR

T1 - Spatial fluctuations and localisation effects in optical characteristics of p-doped GaN films

AU - Goldys, Ewa

AU - Godlewski, Mick

AU - Kaminska, Eliana

AU - Piotrowska, Anna

AU - Butcher, Scott

PY - 2001/11

Y1 - 2001/11

N2 - We report the observation of several intense satellite lines in the emission of p-GaN excited at 325 nm with separations suggesting a multiple LO phonon-related process. The observed phenomenon is interpreted as hot exciton luminescence enhanced by potential fluctuations and localisation. Using optically detected magnetic resonance and photoluminescence kinetics we explore the compensation processes underpinning these localisation effects.

AB - We report the observation of several intense satellite lines in the emission of p-GaN excited at 325 nm with separations suggesting a multiple LO phonon-related process. The observed phenomenon is interpreted as hot exciton luminescence enhanced by potential fluctuations and localisation. Using optically detected magnetic resonance and photoluminescence kinetics we explore the compensation processes underpinning these localisation effects.

KW - PHOTOLUMINESCENCE

KW - MG

M3 - Article

VL - 228

SP - 365

EP - 369

JO - Physica Status Solidi B: Basic Solid State Physics

JF - Physica Status Solidi B: Basic Solid State Physics

SN - 0370-1972

IS - 2

T2 - 4th International Conference on Nitride Semiconductors (ICNS-4)

Y2 - 16 July 2001 through 20 July 2001

ER -

Spatial fluctuations and localisation effects in optical characteristics of p-doped GaN films

Abstract

Keywords

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