Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping

Fan Wang; Qian Gao; Kun Peng; Zhe Li; Ziyuan Li; Yanan Guo; Lan Fu; Leigh Morris Smith; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/nl504929n

Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping

Fan Wang^*, Qian Gao, Kun Peng, Zhe Li, Ziyuan Li, Yanan Guo, Lan Fu, Leigh Morris Smith, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

ARC Centre of Excellence for Nanoscale BioPhotonics (CNBP)

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.

Original language	English
Pages (from-to)	3017-3023
Number of pages	7
Journal	Nano Letters
Volume	15
Issue number	5
DOIs	https://doi.org/10.1021/nl504929n
Publication status	Published - 13 May 2015

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10.1021/nl504929n

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title = "Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping",

abstract = "We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.",

author = "Fan Wang and Qian Gao and Kun Peng and Zhe Li and Ziyuan Li and Yanan Guo and Lan Fu and Smith, {Leigh Morris} and Tan, {Hark Hoe} and Chennupati Jagadish",

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T1 - Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping

AU - Wang, Fan

AU - Gao, Qian

AU - Peng, Kun

AU - Li, Zhe

AU - Li, Ziyuan

AU - Guo, Yanan

AU - Fu, Lan

AU - Smith, Leigh Morris

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2015/5/13

Y1 - 2015/5/13

N2 - We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.

AB - We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.

UR - http://www.scopus.com/inward/record.url?scp=84929151640&partnerID=8YFLogxK

U2 - 10.1021/nl504929n

DO - 10.1021/nl504929n

M3 - Article

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AN - SCOPUS:84929151640

SN - 1530-6984

VL - 15

SP - 3017

EP - 3023

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping

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