Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping

Fan Wang*, Qian Gao, Kun Peng, Zhe Li, Ziyuan Li, Yanan Guo, Lan Fu, Leigh Morris Smith, Hark Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.

Original languageEnglish
Pages (from-to)3017-3023
Number of pages7
JournalNano Letters
Volume15
Issue number5
DOIs
Publication statusPublished - 13 May 2015

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