Spectroscopic ellipsometry of TaNx and VN films

J. Mistrik*, K. Takahashi, R. Antos, M. Aoyama, T. Yamaguchi, Y. Anma, Y. Fukuda, M. B. Takeyama, A. Noya, Z. T. Jiang, S. M. Thurgate, G. V. Riessen

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)

    Abstract

    We report on spectro-ellipsometric investigations of reactively sputtered tantalum nitride (TaNx/SiO2) and vanadium nitride (VN/Si) films. Several TaNx layers with different deposition temperatures (200-400 °C) and a VN layer were prepared optically thick and analyzed using the bulk formula. For thin TaNx layers prepared with the same temperatures as thick layers, the Drude-Lorentz parameterization of dielectric functions was used by simultaneous fitting of ellipsometric and optical transmittance spectra. VN pseudo-dielectric functions show strong metallic character, which is typical for other transition metal nitrides. In contrast, the TaNx dielectric constants obtained here range from a metallic to a non-metallic character depending on substrate temperature, but independent of the film thickness. This substrate temperature dependence may be due to multiple phases in the TaNx films.

    Original languageEnglish
    Pages (from-to)473-477
    Number of pages5
    JournalThin Solid Films
    Volume455-456
    DOIs
    Publication statusPublished - 1 May 2004

    Keywords

    • Ellipsometry
    • Nitrides
    • Optical properties
    • Sputtering

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