Spectroscopic ellipsometry of TaNx and VN films

J. Mistrik; K. Takahashi; R. Antos; M. Aoyama; T. Yamaguchi; Y. Anma; Y. Fukuda; M. B. Takeyama; A. Noya; Z. T. Jiang; S. M. Thurgate; G. V. Riessen

doi:10.1016/j.tsf.2003.11.245

Spectroscopic ellipsometry of TaN_x and VN films

J. Mistrik^*, K. Takahashi, R. Antos, M. Aoyama, T. Yamaguchi, Y. Anma, Y. Fukuda, M. B. Takeyama, A. Noya, Z. T. Jiang, S. M. Thurgate, G. V. Riessen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We report on spectro-ellipsometric investigations of reactively sputtered tantalum nitride (TaN_x/SiO₂) and vanadium nitride (VN/Si) films. Several TaN_x layers with different deposition temperatures (200-400 °C) and a VN layer were prepared optically thick and analyzed using the bulk formula. For thin TaN_x layers prepared with the same temperatures as thick layers, the Drude-Lorentz parameterization of dielectric functions was used by simultaneous fitting of ellipsometric and optical transmittance spectra. VN pseudo-dielectric functions show strong metallic character, which is typical for other transition metal nitrides. In contrast, the TaN_x dielectric constants obtained here range from a metallic to a non-metallic character depending on substrate temperature, but independent of the film thickness. This substrate temperature dependence may be due to multiple phases in the TaN_x films.

Original language	English
Pages (from-to)	473-477
Number of pages	5
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2003.11.245
Publication status	Published - 1 May 2004

Keywords

Ellipsometry
Nitrides
Optical properties
Sputtering

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10.1016/j.tsf.2003.11.245

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@article{c9094bda78164d3cb4ed29ef14677130,

title = "Spectroscopic ellipsometry of TaNx and VN films",

abstract = "We report on spectro-ellipsometric investigations of reactively sputtered tantalum nitride (TaNx/SiO2) and vanadium nitride (VN/Si) films. Several TaNx layers with different deposition temperatures (200-400 °C) and a VN layer were prepared optically thick and analyzed using the bulk formula. For thin TaNx layers prepared with the same temperatures as thick layers, the Drude-Lorentz parameterization of dielectric functions was used by simultaneous fitting of ellipsometric and optical transmittance spectra. VN pseudo-dielectric functions show strong metallic character, which is typical for other transition metal nitrides. In contrast, the TaNx dielectric constants obtained here range from a metallic to a non-metallic character depending on substrate temperature, but independent of the film thickness. This substrate temperature dependence may be due to multiple phases in the TaNx films.",

keywords = "Ellipsometry, Nitrides, Optical properties, Sputtering",

author = "J. Mistrik and K. Takahashi and R. Antos and M. Aoyama and T. Yamaguchi and Y. Anma and Y. Fukuda and Takeyama, \{M. B.\} and A. Noya and Jiang, \{Z. T.\} and Thurgate, \{S. M.\} and Riessen, \{G. V.\}",

year = "2004",

month = may,

day = "1",

doi = "10.1016/j.tsf.2003.11.245",

language = "English",

volume = "455-456",

pages = "473--477",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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TY - JOUR

T1 - Spectroscopic ellipsometry of TaNx and VN films

AU - Mistrik, J.

AU - Takahashi, K.

AU - Antos, R.

AU - Aoyama, M.

AU - Yamaguchi, T.

AU - Anma, Y.

AU - Fukuda, Y.

AU - Takeyama, M. B.

AU - Noya, A.

AU - Jiang, Z. T.

AU - Thurgate, S. M.

AU - Riessen, G. V.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - We report on spectro-ellipsometric investigations of reactively sputtered tantalum nitride (TaNx/SiO2) and vanadium nitride (VN/Si) films. Several TaNx layers with different deposition temperatures (200-400 °C) and a VN layer were prepared optically thick and analyzed using the bulk formula. For thin TaNx layers prepared with the same temperatures as thick layers, the Drude-Lorentz parameterization of dielectric functions was used by simultaneous fitting of ellipsometric and optical transmittance spectra. VN pseudo-dielectric functions show strong metallic character, which is typical for other transition metal nitrides. In contrast, the TaNx dielectric constants obtained here range from a metallic to a non-metallic character depending on substrate temperature, but independent of the film thickness. This substrate temperature dependence may be due to multiple phases in the TaNx films.

AB - We report on spectro-ellipsometric investigations of reactively sputtered tantalum nitride (TaNx/SiO2) and vanadium nitride (VN/Si) films. Several TaNx layers with different deposition temperatures (200-400 °C) and a VN layer were prepared optically thick and analyzed using the bulk formula. For thin TaNx layers prepared with the same temperatures as thick layers, the Drude-Lorentz parameterization of dielectric functions was used by simultaneous fitting of ellipsometric and optical transmittance spectra. VN pseudo-dielectric functions show strong metallic character, which is typical for other transition metal nitrides. In contrast, the TaNx dielectric constants obtained here range from a metallic to a non-metallic character depending on substrate temperature, but independent of the film thickness. This substrate temperature dependence may be due to multiple phases in the TaNx films.

KW - Ellipsometry

KW - Nitrides

KW - Optical properties

KW - Sputtering

UR - https://www.scopus.com/pages/publications/11144356761

U2 - 10.1016/j.tsf.2003.11.245

DO - 10.1016/j.tsf.2003.11.245

M3 - Article

AN - SCOPUS:11144356761

SN - 0040-6090

VL - 455-456

SP - 473

EP - 477

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Spectroscopic ellipsometry of TaN_x and VN films

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Keywords

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