Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction

S. Yatsunenko; A. Khachapuridze; V. Yu Ivanov; M. Godlewski; Le Van Khoi; Z. Gołacki; G. Karczewski; E. M. Goldys; M. Phillips; P. J. Klar; W. Heimbrodt

Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction

S. Yatsunenko^*, A. Khachapuridze, V. Yu Ivanov, M. Godlewski, Le Van Khoi, Z. Gołacki, G. Karczewski, E. M. Goldys, M. Phillips, P. J. Klar, W. Heimbrodt

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap were discussed. The observed lifetime shortening of intrashell manganese ion emission was related to spin dependent magnetic interactions. The mechanism was found to be active in both bulk and low dimensional structures.

Original language	English
Pages (from-to)	643-648
Number of pages	6
Journal	Acta Physica Polonica A
Volume	103
Issue number	6
Publication status	Published - Jun 2003

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Yatsunenko, S., Khachapuridze, A., Ivanov, V. Y., Godlewski, M., Van Khoi, L., Gołacki, Z., Karczewski, G., Goldys, E. M., Phillips, M., Klar, P. J., & Heimbrodt, W. (2003). Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction. Acta Physica Polonica A, 103(6), 643-648.

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title = "Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction",

abstract = "The spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap were discussed. The observed lifetime shortening of intrashell manganese ion emission was related to spin dependent magnetic interactions. The mechanism was found to be active in both bulk and low dimensional structures.",

author = "S. Yatsunenko and A. Khachapuridze and Ivanov, {V. Yu} and M. Godlewski and {Van Khoi}, Le and Z. Go{\l}acki and G. Karczewski and Goldys, {E. M.} and M. Phillips and Klar, {P. J.} and W. Heimbrodt",

year = "2003",

month = jun,

language = "English",

volume = "103",

pages = "643--648",

journal = "Acta Physica Polonica A",

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T1 - Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction

AU - Yatsunenko, S.

AU - Khachapuridze, A.

AU - Ivanov, V. Yu

AU - Godlewski, M.

AU - Van Khoi, Le

AU - Gołacki, Z.

AU - Karczewski, G.

AU - Goldys, E. M.

AU - Phillips, M.

AU - Klar, P. J.

AU - Heimbrodt, W.

PY - 2003/6

Y1 - 2003/6

N2 - The spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap were discussed. The observed lifetime shortening of intrashell manganese ion emission was related to spin dependent magnetic interactions. The mechanism was found to be active in both bulk and low dimensional structures.

AB - The spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap were discussed. The observed lifetime shortening of intrashell manganese ion emission was related to spin dependent magnetic interactions. The mechanism was found to be active in both bulk and low dimensional structures.

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M3 - Article

AN - SCOPUS:0042154317

SN - 0587-4246

VL - 103

SP - 643

EP - 648

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

IS - 6

ER -

Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction

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