Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction

S. Yatsunenko*, A. Khachapuridze, V. Yu Ivanov, M. Godlewski, Le Van Khoi, Z. Gołacki, G. Karczewski, E. M. Goldys, M. Phillips, P. J. Klar, W. Heimbrodt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap were discussed. The observed lifetime shortening of intrashell manganese ion emission was related to spin dependent magnetic interactions. The mechanism was found to be active in both bulk and low dimensional structures.

Original languageEnglish
Pages (from-to)643-648
Number of pages6
JournalActa Physica Polonica A
Volume103
Issue number6
Publication statusPublished - Jun 2003

Fingerprint Dive into the research topics of 'Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction'. Together they form a unique fingerprint.

Cite this