Sputter-grown Si quantum dot nanostructures for tandem solar cells

Silicon quantum dot (QD)-based 'all-silicon' tandem solar cells have emerged as a promising third generation photovoltaic approach to realize high-efficiency and cost effective solar cells. This approach exploits the quantum confinement effect of silicon QDs embedded in a dielectric matrix to engineer the effective electronic bandgap of a solar cell material. Research work in our group has shown that such a Si QD solar cell can be fabricated by co-sputtering of thin layers of Si-rich dielectric sandwiched between stoichiometric dielectric layers which crystallize to form Si QDs of uniform size on annealing. The Si-richness in the Si-rich layer plays an important role in formation of uniform size and shape. The matrix and barrier layer materials also affect the formation of Si QDs. The bandgap tunability of such Si QD superlattice structures has been clearly demonstrated by photoluminescence and electroluminescence measurements. Doping of Si QD layers has been achieved by impurity incorporation of P, Sb or B in the Si-rich layers. Strong evidence of effective doping has been demonstrated from the enhanced conductivity, from the dopant concentrations extracted from MOS structures and from the formation of rectifying p-n junctions which give an open circuit voltage (V_oc) of 492 mV. The doping mechanism is more likely to be modified interface doping rather than direct doping to the Si QDs.