SRH based trap model for GaN MMIC power switches

Aaron Pereira; Sayed Albahrani; Anthony Parker; Graham Town; Michael Heimlich; Neil Weste

doi:10.1109/COMPEL.2013.6626468

SRH based trap model for GaN MMIC power switches

Aaron Pereira, Sayed Albahrani, Anthony Parker, Graham Town, Michael Heimlich, Neil Weste

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables higher efficiency and lower form factor as compared to Silicon devices. FET switch operate in the linear ohmic region. However, the presence of trap centres in GaN HEMTs alter the on-resistance and shifts the threshold voltage, causing current collapse and degrades the efficiency. Pulsed I-V measurements of a commercial foundry GaN MMIC HEMT revealed drain current collapse and on-resistance modulation in the ohmic region of the HEMT loadline. A trap model based on SRH theory was used to characterize trapping effects that alter the drain current in the linear region of operation.

Original language	English
Title of host publication	2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781467349161, 9781467349147
ISBN (Print)	9781467349154
DOIs	https://doi.org/10.1109/COMPEL.2013.6626468
Publication status	Published - 2013
Event	2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013 - Salt Lake City, UT, United States Duration: 23 Jun 2013 → 26 Jun 2013

Other

Other	2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013
Country/Territory	United States
City	Salt Lake City, UT
Period	23/06/13 → 26/06/13

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10.1109/COMPEL.2013.6626468

Cite this

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title = "SRH based trap model for GaN MMIC power switches",

abstract = "Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables higher efficiency and lower form factor as compared to Silicon devices. FET switch operate in the linear ohmic region. However, the presence of trap centres in GaN HEMTs alter the on-resistance and shifts the threshold voltage, causing current collapse and degrades the efficiency. Pulsed I-V measurements of a commercial foundry GaN MMIC HEMT revealed drain current collapse and on-resistance modulation in the ohmic region of the HEMT loadline. A trap model based on SRH theory was used to characterize trapping effects that alter the drain current in the linear region of operation.",

author = "Aaron Pereira and Sayed Albahrani and Anthony Parker and Graham Town and Michael Heimlich and Neil Weste",

year = "2013",

doi = "10.1109/COMPEL.2013.6626468",

language = "English",

isbn = "9781467349154",

pages = "1--4",

booktitle = "2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013 ; Conference date: 23-06-2013 Through 26-06-2013",

}

Pereira, A, Albahrani, S, Parker, A , Town, G, Heimlich, M & Weste, N 2013, SRH based trap model for GaN MMIC power switches. in 2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013., 6626468, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013, Salt Lake City, UT, United States, 23/06/13. https://doi.org/10.1109/COMPEL.2013.6626468

SRH based trap model for GaN MMIC power switches. / Pereira, Aaron; Albahrani, Sayed; Parker, Anthony et al.

2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 1-4 6626468.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - SRH based trap model for GaN MMIC power switches

AU - Pereira, Aaron

AU - Albahrani, Sayed

AU - Parker, Anthony

AU - Town, Graham

AU - Heimlich, Michael

AU - Weste, Neil

PY - 2013

Y1 - 2013

N2 - Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables higher efficiency and lower form factor as compared to Silicon devices. FET switch operate in the linear ohmic region. However, the presence of trap centres in GaN HEMTs alter the on-resistance and shifts the threshold voltage, causing current collapse and degrades the efficiency. Pulsed I-V measurements of a commercial foundry GaN MMIC HEMT revealed drain current collapse and on-resistance modulation in the ohmic region of the HEMT loadline. A trap model based on SRH theory was used to characterize trapping effects that alter the drain current in the linear region of operation.

AB - Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables higher efficiency and lower form factor as compared to Silicon devices. FET switch operate in the linear ohmic region. However, the presence of trap centres in GaN HEMTs alter the on-resistance and shifts the threshold voltage, causing current collapse and degrades the efficiency. Pulsed I-V measurements of a commercial foundry GaN MMIC HEMT revealed drain current collapse and on-resistance modulation in the ohmic region of the HEMT loadline. A trap model based on SRH theory was used to characterize trapping effects that alter the drain current in the linear region of operation.

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DO - 10.1109/COMPEL.2013.6626468

M3 - Conference proceeding contribution

AN - SCOPUS:84889068890

SN - 9781467349154

SP - 1

EP - 4

BT - 2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013

Y2 - 23 June 2013 through 26 June 2013

ER -

SRH based trap model for GaN MMIC power switches

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