SRH based trap model for GaN MMIC power switches

Aaron Pereira, Sayed Albahrani, Anthony Parker, Graham Town, Michael Heimlich, Neil Weste

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables higher efficiency and lower form factor as compared to Silicon devices. FET switch operate in the linear ohmic region. However, the presence of trap centres in GaN HEMTs alter the on-resistance and shifts the threshold voltage, causing current collapse and degrades the efficiency. Pulsed I-V measurements of a commercial foundry GaN MMIC HEMT revealed drain current collapse and on-resistance modulation in the ohmic region of the HEMT loadline. A trap model based on SRH theory was used to characterize trapping effects that alter the drain current in the linear region of operation.

Original languageEnglish
Title of host publication2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781467349161, 9781467349147
ISBN (Print)9781467349154
DOIs
Publication statusPublished - 2013
Event2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013 - Salt Lake City, UT, United States
Duration: 23 Jun 201326 Jun 2013

Other

Other2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013
CountryUnited States
CitySalt Lake City, UT
Period23/06/1326/06/13

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