TY - GEN
T1 - Statistical modeling of GaN power devices with ASM-GaN model
AU - Mahajan, Dhawal
AU - Khandelwal, Sourabh
PY - 2020
Y1 - 2020
N2 - In this paper, we have used electrical specifications from the data-sheet of a commercially available GaN HEMT power device and a well calibrated physical model using ASM-GaN [1], [2] compact model as a starting point to arrive at corner and statistical models of that device using Backward Propagation of Variance (BPV). Both dc (Vth, RDS(on)) and ac (Ciss, Coss, Crss Rg) electrical specifications were used to derive the models. Furthermore, the statistical model was used to perform Monte Carlo simulations for the gate charge and switching transients in order to determine the distribution of circuit level electrical specifications from the underlying variations in the statistical model.
AB - In this paper, we have used electrical specifications from the data-sheet of a commercially available GaN HEMT power device and a well calibrated physical model using ASM-GaN [1], [2] compact model as a starting point to arrive at corner and statistical models of that device using Backward Propagation of Variance (BPV). Both dc (Vth, RDS(on)) and ac (Ciss, Coss, Crss Rg) electrical specifications were used to derive the models. Furthermore, the statistical model was used to perform Monte Carlo simulations for the gate charge and switching transients in order to determine the distribution of circuit level electrical specifications from the underlying variations in the statistical model.
KW - ASM-GaN compact model
KW - Corner models
KW - Discrete power GaN HEMTs
KW - Process aware design
KW - Statistical model
UR - http://www.scopus.com/inward/record.url?scp=85103906824&partnerID=8YFLogxK
U2 - 10.1109/PEDES49360.2020.9379738
DO - 10.1109/PEDES49360.2020.9379738
M3 - Conference proceeding contribution
AN - SCOPUS:85103906824
T3 - 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020
BT - 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020
Y2 - 16 December 2020 through 19 December 2020
ER -