Statistical modeling of GaN power devices with ASM-GaN model

Dhawal Mahajan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

In this paper, we have used electrical specifications from the data-sheet of a commercially available GaN HEMT power device and a well calibrated physical model using ASM-GaN [1], [2] compact model as a starting point to arrive at corner and statistical models of that device using Backward Propagation of Variance (BPV). Both dc (Vth, RDS(on)) and ac (Ciss, Coss, Crss Rg) electrical specifications were used to derive the models. Furthermore, the statistical model was used to perform Monte Carlo simulations for the gate charge and switching transients in order to determine the distribution of circuit level electrical specifications from the underlying variations in the statistical model.

Original languageEnglish
Title of host publication9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages6
ISBN (Electronic)9781728156729
DOIs
Publication statusPublished - 2020
Event9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020 - Jaipur, India
Duration: 16 Dec 202019 Dec 2020

Publication series

Name9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020

Conference

Conference9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020
CountryIndia
CityJaipur
Period16/12/2019/12/20

Keywords

  • ASM-GaN compact model
  • Corner models
  • Discrete power GaN HEMTs
  • Process aware design
  • Statistical model

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