Statistical modeling of GaN power devices with ASM-GaN model

Dhawal Mahajan; Sourabh Khandelwal

doi:10.1109/PEDES49360.2020.9379738

Statistical modeling of GaN power devices with ASM-GaN model

Dhawal Mahajan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

In this paper, we have used electrical specifications from the data-sheet of a commercially available GaN HEMT power device and a well calibrated physical model using ASM-GaN [1], [2] compact model as a starting point to arrive at corner and statistical models of that device using Backward Propagation of Variance (BPV). Both dc (Vth, RDS(on)) and ac (Ciss, Coss, Crss Rg) electrical specifications were used to derive the models. Furthermore, the statistical model was used to perform Monte Carlo simulations for the gate charge and switching transients in order to determine the distribution of circuit level electrical specifications from the underlying variations in the statistical model.

Original language	English
Title of host publication	9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	6
ISBN (Electronic)	9781728156729
DOIs	https://doi.org/10.1109/PEDES49360.2020.9379738
Publication status	Published - 2020
Event	9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020 - Jaipur, India Duration: 16 Dec 2020 → 19 Dec 2020

Publication series

Name	9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020

Conference

Conference	9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020
Country/Territory	India
City	Jaipur
Period	16/12/20 → 19/12/20

Keywords

ASM-GaN compact model
Corner models
Discrete power GaN HEMTs
Process aware design
Statistical model

Access to Document

10.1109/PEDES49360.2020.9379738

Cite this

Mahajan, D., & Khandelwal, S. (2020). Statistical modeling of GaN power devices with ASM-GaN model. In 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020 (9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PEDES49360.2020.9379738

Mahajan, Dhawal ; Khandelwal, Sourabh. / Statistical modeling of GaN power devices with ASM-GaN model. 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2020. (9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020).

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title = "Statistical modeling of GaN power devices with ASM-GaN model",

abstract = "In this paper, we have used electrical specifications from the data-sheet of a commercially available GaN HEMT power device and a well calibrated physical model using ASM-GaN [1], [2] compact model as a starting point to arrive at corner and statistical models of that device using Backward Propagation of Variance (BPV). Both dc (Vth, RDS(on)) and ac (Ciss, Coss, Crss Rg) electrical specifications were used to derive the models. Furthermore, the statistical model was used to perform Monte Carlo simulations for the gate charge and switching transients in order to determine the distribution of circuit level electrical specifications from the underlying variations in the statistical model.",

keywords = "ASM-GaN compact model, Corner models, Discrete power GaN HEMTs, Process aware design, Statistical model",

author = "Dhawal Mahajan and Sourabh Khandelwal",

year = "2020",

doi = "10.1109/PEDES49360.2020.9379738",

language = "English",

series = "9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

booktitle = "9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020",

address = "United States",

note = "9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020 ; Conference date: 16-12-2020 Through 19-12-2020",

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Mahajan, D & Khandelwal, S 2020, Statistical modeling of GaN power devices with ASM-GaN model. in 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020. 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020, Jaipur, India, 16/12/20. https://doi.org/10.1109/PEDES49360.2020.9379738

Statistical modeling of GaN power devices with ASM-GaN model. / Mahajan, Dhawal; Khandelwal, Sourabh.

9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2020. (9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Statistical modeling of GaN power devices with ASM-GaN model

AU - Mahajan, Dhawal

AU - Khandelwal, Sourabh

PY - 2020

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N2 - In this paper, we have used electrical specifications from the data-sheet of a commercially available GaN HEMT power device and a well calibrated physical model using ASM-GaN [1], [2] compact model as a starting point to arrive at corner and statistical models of that device using Backward Propagation of Variance (BPV). Both dc (Vth, RDS(on)) and ac (Ciss, Coss, Crss Rg) electrical specifications were used to derive the models. Furthermore, the statistical model was used to perform Monte Carlo simulations for the gate charge and switching transients in order to determine the distribution of circuit level electrical specifications from the underlying variations in the statistical model.

AB - In this paper, we have used electrical specifications from the data-sheet of a commercially available GaN HEMT power device and a well calibrated physical model using ASM-GaN [1], [2] compact model as a starting point to arrive at corner and statistical models of that device using Backward Propagation of Variance (BPV). Both dc (Vth, RDS(on)) and ac (Ciss, Coss, Crss Rg) electrical specifications were used to derive the models. Furthermore, the statistical model was used to perform Monte Carlo simulations for the gate charge and switching transients in order to determine the distribution of circuit level electrical specifications from the underlying variations in the statistical model.

KW - ASM-GaN compact model

KW - Corner models

KW - Discrete power GaN HEMTs

KW - Process aware design

KW - Statistical model

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DO - 10.1109/PEDES49360.2020.9379738

M3 - Conference proceeding contribution

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T3 - 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020

BT - 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020

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Mahajan D, Khandelwal S. Statistical modeling of GaN power devices with ASM-GaN model. In 9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2020. (9th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2020). https://doi.org/10.1109/PEDES49360.2020.9379738

Statistical modeling of GaN power devices with ASM-GaN model

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