Statistical modeling of manufacturing variability in GaN HEMT I-V characteristics with ASM-HEMT

Fredo Chavez, Nicholas C. Miller, Devin T. Davis, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

4 Citations (Scopus)


In this paper, a statistical simulation model for variability in I-V characteristics of GaN-HEMTs due to the manufacturing process variations is presented. The variability in I-V characteristics is found to depend on changes in device geometry and device physics parameters caused by manufacturing process variations. This paper presents a systematic methodology to model these variations. Using physics-based formulations of the industry standard ASM-HEMT model and developed methodology, the effects of manufacturing variations on I-V are accurately modeled for the first time. The model has been validated for 114 GaN HEMTs processed at a standard GaN foundry. The developed simulation model is used to analyze the impact of variations on P1dB. This model lays the foundations for yield analysis in GaN HEMT technologies.

Original languageEnglish
Title of host publication2022 IEEE/MTT-S International Microwave Symposium
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages3
ISBN (Electronic)9781665496131
ISBN (Print)9781665496148
Publication statusPublished - 2022
Event2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 - Denver, United States
Duration: 19 Jun 202224 Jun 2022

Publication series

ISSN (Print)0149-645X
ISSN (Electronic)2576-7216


Conference2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Country/TerritoryUnited States


  • Statistical models
  • GaN HEMTs
  • Power Amplifiers


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