@inproceedings{a43953de83e344aa95422edfb3bcb31b,
title = "Statistical modeling of manufacturing variability in GaN HEMT I-V characteristics with ASM-HEMT",
abstract = "In this paper, a statistical simulation model for variability in I-V characteristics of GaN-HEMTs due to the manufacturing process variations is presented. The variability in I-V characteristics is found to depend on changes in device geometry and device physics parameters caused by manufacturing process variations. This paper presents a systematic methodology to model these variations. Using physics-based formulations of the industry standard ASM-HEMT model and developed methodology, the effects of manufacturing variations on I-V are accurately modeled for the first time. The model has been validated for 114 GaN HEMTs processed at a standard GaN foundry. The developed simulation model is used to analyze the impact of variations on P1dB. This model lays the foundations for yield analysis in GaN HEMT technologies. ",
keywords = "Statistical models, GaN HEMTs, Power Amplifiers, ASM-HEMT",
author = "Fredo Chavez and Miller, {Nicholas C.} and Davis, {Devin T.} and Sourabh Khandelwal",
year = "2022",
doi = "10.1109/IMS37962.2022.9865304",
language = "English",
isbn = "9781665496148",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "375--377",
booktitle = "2022 IEEE/MTT-S International Microwave Symposium",
address = "United States",
note = "2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 ; Conference date: 19-06-2022 Through 24-06-2022",
}