Statistics of single-electron signals in electron-multiplying charge-coupled devices

Taras Plakhotnik; Arjun Chennu; Andrei V. Zvyagin

doi:10.1109/TED.2006.870572

Statistics of single-electron signals in electron-multiplying charge-coupled devices

Taras Plakhotnik^*, Arjun Chennu, Andrei V. Zvyagin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

153 Downloads (Pure)

Abstract

Electron-multiplying charge coupled devices promise to revolutionize ultrasensitive optical imaging. The authors present a simple methodology allowing reliable measurement of camera characteristics and statistics of single-electron events, compare the measurements to a simple theoretical model, and report camera performance in a truly photon-counting regime that eliminates the excess noise related to fluctuations of the multiplication gain.

Original language	English
Pages (from-to)	618-622
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	4
DOIs	https://doi.org/10.1109/TED.2006.870572
Publication status	Published - Apr 2006
Externally published	Yes

Bibliographical note

Copyright 2006 IEEE. Reprinted from IEEE transactions on electron devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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Statistics of single-electron signals in electron-multiplying charge-coupled devices

Abstract

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