Steady state and transient thermal analyses of GaAs pHEMT devices

Bryan K. Schwitter*, Michael C. Heimlich, Anthony P. Fattorini, Jabra Tarazi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

4 Citations (Scopus)

Abstract

GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Finite Element Method (FEM) thermal simulations are compared with measurements and used to investigate the frequency response of device self-heating. Comparisons are made with existing thermal models. The influence of individual device structures on the thermal characteristics of an entire device is investigated and the epitaxial layers are seen to have a large impact on overall performance. Bias dependent self-heating, independent of thermal dissipation is observed and attributed to confinement of the thermal source as the drain voltage is increased.

Original languageEnglish
Title of host publication2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-7
Number of pages7
ISBN (Electronic)9781467301305
ISBN (Print)9781467301299
DOIs
Publication statusPublished - 2012
Event2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012 - Cocoa Beach, FL, United States
Duration: 15 Apr 201217 Apr 2012

Other

Other2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
CountryUnited States
CityCocoa Beach, FL
Period15/04/1217/04/12

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