Steady state and transient thermal analyses of GaAs pHEMT devices

Bryan K. Schwitter; Michael C. Heimlich; Anthony P. Fattorini; Jabra Tarazi

doi:10.1109/WAMICON.2012.6208438

Steady state and transient thermal analyses of GaAs pHEMT devices

Bryan K. Schwitter^*, Michael C. Heimlich, Anthony P. Fattorini, Jabra Tarazi

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Finite Element Method (FEM) thermal simulations are compared with measurements and used to investigate the frequency response of device self-heating. Comparisons are made with existing thermal models. The influence of individual device structures on the thermal characteristics of an entire device is investigated and the epitaxial layers are seen to have a large impact on overall performance. Bias dependent self-heating, independent of thermal dissipation is observed and attributed to confinement of the thermal source as the drain voltage is increased.

Original language	English
Title of host publication	2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-7
Number of pages	7
ISBN (Electronic)	9781467301305
ISBN (Print)	9781467301299
DOIs	https://doi.org/10.1109/WAMICON.2012.6208438
Publication status	Published - 2012
Event	2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012 - Cocoa Beach, FL, United States Duration: 15 Apr 2012 → 17 Apr 2012

Other

Other	2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
Country/Territory	United States
City	Cocoa Beach, FL
Period	15/04/12 → 17/04/12

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10.1109/WAMICON.2012.6208438

Cite this

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title = "Steady state and transient thermal analyses of GaAs pHEMT devices",

abstract = "GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Finite Element Method (FEM) thermal simulations are compared with measurements and used to investigate the frequency response of device self-heating. Comparisons are made with existing thermal models. The influence of individual device structures on the thermal characteristics of an entire device is investigated and the epitaxial layers are seen to have a large impact on overall performance. Bias dependent self-heating, independent of thermal dissipation is observed and attributed to confinement of the thermal source as the drain voltage is increased.",

author = "Schwitter, {Bryan K.} and Heimlich, {Michael C.} and Fattorini, {Anthony P.} and Jabra Tarazi",

year = "2012",

doi = "10.1109/WAMICON.2012.6208438",

language = "English",

isbn = "9781467301299",

pages = "1--7",

booktitle = "2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012 ; Conference date: 15-04-2012 Through 17-04-2012",

}

Schwitter, BK, Heimlich, MC, Fattorini, AP & Tarazi, J 2012, Steady state and transient thermal analyses of GaAs pHEMT devices. in 2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012., 6208438, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 1-7, 2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012, Cocoa Beach, FL, United States, 15/04/12. https://doi.org/10.1109/WAMICON.2012.6208438

Steady state and transient thermal analyses of GaAs pHEMT devices. / Schwitter, Bryan K.; Heimlich, Michael C.; Fattorini, Anthony P. et al.
2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012. Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE), 2012. p. 1-7 6208438.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Steady state and transient thermal analyses of GaAs pHEMT devices

AU - Schwitter, Bryan K.

AU - Heimlich, Michael C.

AU - Fattorini, Anthony P.

AU - Tarazi, Jabra

PY - 2012

Y1 - 2012

N2 - GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Finite Element Method (FEM) thermal simulations are compared with measurements and used to investigate the frequency response of device self-heating. Comparisons are made with existing thermal models. The influence of individual device structures on the thermal characteristics of an entire device is investigated and the epitaxial layers are seen to have a large impact on overall performance. Bias dependent self-heating, independent of thermal dissipation is observed and attributed to confinement of the thermal source as the drain voltage is increased.

AB - GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Finite Element Method (FEM) thermal simulations are compared with measurements and used to investigate the frequency response of device self-heating. Comparisons are made with existing thermal models. The influence of individual device structures on the thermal characteristics of an entire device is investigated and the epitaxial layers are seen to have a large impact on overall performance. Bias dependent self-heating, independent of thermal dissipation is observed and attributed to confinement of the thermal source as the drain voltage is increased.

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DO - 10.1109/WAMICON.2012.6208438

M3 - Conference proceeding contribution

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BT - 2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, N.J.

T2 - 2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012

Y2 - 15 April 2012 through 17 April 2012

ER -

Steady state and transient thermal analyses of GaAs pHEMT devices

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