Stoichiometry effects and the Moss-Burstein effect for InN

K. S A Butcher*, H. Hirshy, R. M. Perks, M. Wintrebert-Fouquet, P. P T Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss-Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.

Original languageEnglish
Pages (from-to)66-74
Number of pages9
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number1
DOIs
Publication statusPublished - Jan 2006

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