Stoichiometry effects and the Moss-Burstein effect for InN

K. S A Butcher*, H. Hirshy, R. M. Perks, M. Wintrebert-Fouquet, P. P T Chen

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    33 Citations (Scopus)

    Abstract

    We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss-Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.

    Original languageEnglish
    Pages (from-to)66-74
    Number of pages9
    JournalPhysica Status Solidi (A) Applications and Materials Science
    Volume203
    Issue number1
    DOIs
    Publication statusPublished - Jan 2006

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