Stoichiometry effects and the Moss-Burstein effect for InN

K. S A Butcher; H. Hirshy; R. M. Perks; M. Wintrebert-Fouquet; P. P T Chen

doi:10.1002/pssa.200563504

Stoichiometry effects and the Moss-Burstein effect for InN

K. S A Butcher^*, H. Hirshy, R. M. Perks, M. Wintrebert-Fouquet, P. P T Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss-Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.

Original language	English
Pages (from-to)	66-74
Number of pages	9
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	203
Issue number	1
DOIs	https://doi.org/10.1002/pssa.200563504
Publication status	Published - Jan 2006

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AU - Chen, P. P T

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N2 - We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss-Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.

AB - We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss-Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.

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JO - Physica Status Solidi (A) Applications and Materials Science

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Stoichiometry effects and the Moss-Burstein effect for InN

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