Structural and optical study of Ge nanocrystals embedded in Si3N4                         matrix

S. Lee; S. Huang; G. Conibeer; M. A. Green

doi:10.1016/j.egypro.2011.10.146

Structural and optical study of Ge nanocrystals embedded in Si₃N₄ matrix

S. Lee^*, S. Huang, G. Conibeer, M. A. Green

^*Corresponding author for this work

Research output: Contribution to journal › Conference paper › peer-review

9 Citations (Scopus)

65 Downloads (Pure)

Abstract

Ge nanocrystals were fabricated in Si₃N₄ matrix by rf (radio frequency) magnetron sputtering, followed by post-annealing in a conventional tube furnace filled with N₂. Ge content was varied between 30-50vol% in Ge-rich silicon nitride (GRN) layer with variation of annealing temperature between 600-900 °C were applied to study the crystallization properties. The structure of the Ge nanocrystals was studied by Raman spectroscopy, glancing incidence x-ray diffraction (GIXRD) and transmission electron microscope (TEM). The composition and bonding status of Ge nanocrystals was confirmed by x-ray photoelectron spectroscopy (XPS). TEM images, Raman and XRD results show that the crystallization transition is dependent on temperature and Ge content. Crystals in 50vol% annealed at 900 °C were found as partially oxidized with 2at% of oxygen during the annealing process. This was shown by the XPS result. However, absorption measurement did not show evidence of quantum confinement of the Ge crystals.

Original language	English
Pages (from-to)	20-27
Number of pages	8
Journal	Energy Procedia
Volume	10
DOIs	https://doi.org/10.1016/j.egypro.2011.10.146
Publication status	Published - 2011
Externally published	Yes
Event	Advanced Inorganic Materials and Concepts for Photovoltaics - Symposium R at the E-MRS 2011 Spring Meeting - Nice, France Duration: 9 May 2011 → 13 May 2011

Bibliographical note

Copyright the Publisher 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

Germanium
disk-shaped nanocrystals
GIXRD
Raman
TEM

Access to Document

10.1016/j.egypro.2011.10.146Licence: CC BY-NC-ND

Publisher version (open access)Final published version, 332 KBLicence: CC BY-NC-ND

Cite this

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title = "Structural and optical study of Ge nanocrystals embedded in Si3N4 matrix",

abstract = "Ge nanocrystals were fabricated in Si3N4 matrix by rf (radio frequency) magnetron sputtering, followed by post-annealing in a conventional tube furnace filled with N2. Ge content was varied between 30-50vol% in Ge-rich silicon nitride (GRN) layer with variation of annealing temperature between 600-900 °C were applied to study the crystallization properties. The structure of the Ge nanocrystals was studied by Raman spectroscopy, glancing incidence x-ray diffraction (GIXRD) and transmission electron microscope (TEM). The composition and bonding status of Ge nanocrystals was confirmed by x-ray photoelectron spectroscopy (XPS). TEM images, Raman and XRD results show that the crystallization transition is dependent on temperature and Ge content. Crystals in 50vol% annealed at 900 °C were found as partially oxidized with 2at% of oxygen during the annealing process. This was shown by the XPS result. However, absorption measurement did not show evidence of quantum confinement of the Ge crystals.",

keywords = "Germanium, disk-shaped nanocrystals, GIXRD, Raman, TEM",

author = "S. Lee and S. Huang and G. Conibeer and Green, {M. A.}",

note = "Copyright the Publisher 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.; Advanced Inorganic Materials and Concepts for Photovoltaics - Symposium R at the E-MRS 2011 Spring Meeting ; Conference date: 09-05-2011 Through 13-05-2011",

year = "2011",

doi = "10.1016/j.egypro.2011.10.146",

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T1 - Structural and optical study of Ge nanocrystals embedded in Si3N4 matrix

AU - Lee, S.

AU - Huang, S.

AU - Conibeer, G.

AU - Green, M. A.

N1 - Copyright the Publisher 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2011

Y1 - 2011

N2 - Ge nanocrystals were fabricated in Si3N4 matrix by rf (radio frequency) magnetron sputtering, followed by post-annealing in a conventional tube furnace filled with N2. Ge content was varied between 30-50vol% in Ge-rich silicon nitride (GRN) layer with variation of annealing temperature between 600-900 °C were applied to study the crystallization properties. The structure of the Ge nanocrystals was studied by Raman spectroscopy, glancing incidence x-ray diffraction (GIXRD) and transmission electron microscope (TEM). The composition and bonding status of Ge nanocrystals was confirmed by x-ray photoelectron spectroscopy (XPS). TEM images, Raman and XRD results show that the crystallization transition is dependent on temperature and Ge content. Crystals in 50vol% annealed at 900 °C were found as partially oxidized with 2at% of oxygen during the annealing process. This was shown by the XPS result. However, absorption measurement did not show evidence of quantum confinement of the Ge crystals.

AB - Ge nanocrystals were fabricated in Si3N4 matrix by rf (radio frequency) magnetron sputtering, followed by post-annealing in a conventional tube furnace filled with N2. Ge content was varied between 30-50vol% in Ge-rich silicon nitride (GRN) layer with variation of annealing temperature between 600-900 °C were applied to study the crystallization properties. The structure of the Ge nanocrystals was studied by Raman spectroscopy, glancing incidence x-ray diffraction (GIXRD) and transmission electron microscope (TEM). The composition and bonding status of Ge nanocrystals was confirmed by x-ray photoelectron spectroscopy (XPS). TEM images, Raman and XRD results show that the crystallization transition is dependent on temperature and Ge content. Crystals in 50vol% annealed at 900 °C were found as partially oxidized with 2at% of oxygen during the annealing process. This was shown by the XPS result. However, absorption measurement did not show evidence of quantum confinement of the Ge crystals.

KW - Germanium

KW - disk-shaped nanocrystals

KW - GIXRD

KW - Raman

KW - TEM

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