Structural, optical, and electrical properties of silicon nanocrystals fabricated by high silicon content silicon-rich oxide and silicon dioxide bilayers

Keita Nomoto; Terry Chien-Jen Yang; Anna V. Ceguerra; Andrew Breen; Lingfeng Wu; Xuguang Jia; Tian Zhang; Binesh Puthen-Veettil; Ziyun Lin; Simon Ringer; Gavin Conibeer; Ivan Perez-Wurfl

doi:10.7567/APEX.9.115001

Structural, optical, and electrical properties of silicon nanocrystals fabricated by high silicon content silicon-rich oxide and silicon dioxide bilayers

Keita Nomoto^*, Terry Chien-Jen Yang, Anna V. Ceguerra, Andrew Breen, Lingfeng Wu, Xuguang Jia, Tian Zhang, Binesh Puthen-Veettil, Ziyun Lin, Simon Ringer, Gavin Conibeer, Ivan Perez-Wurfl

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

3 Citations (Scopus)

Abstract

Intrinsic, boron (B)-doped, and phosphorus (P)-doped silicon nanocrystals (Si NCs) formed from an excess Si concentration of 40 at. % were investigated to study their structural, optical, and electrical properties. Atom probe tomography (APT) revealed that the size and arrangement of Si NCs were different in each sample. A strong blue shift in photoluminescence spectra for the intrinsic and B-doped Si NCs was correlated with the volume fraction of small Si NCs. The lower resistivity of the B-doped sample than the P-doped one was explained by the percolation of Si NCs through the film.

Original language	English
Article number	115001
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Express
Volume	9
Issue number	11
DOIs	https://doi.org/10.7567/APEX.9.115001
Publication status	Published - Nov 2016
Externally published	Yes

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Nomoto, K., Yang, T. C-J., Ceguerra, A. V., Breen, A., Wu, L., Jia, X., Zhang, T., Puthen-Veettil, B., Lin, Z., Ringer, S., Conibeer, G., & Perez-Wurfl, I. (2016). Structural, optical, and electrical properties of silicon nanocrystals fabricated by high silicon content silicon-rich oxide and silicon dioxide bilayers. Applied Physics Express, 9(11), 1-4. [115001]. https://doi.org/10.7567/APEX.9.115001

@article{0abd02c709774c968a97032e23ca3197,

title = "Structural, optical, and electrical properties of silicon nanocrystals fabricated by high silicon content silicon-rich oxide and silicon dioxide bilayers",

abstract = "Intrinsic, boron (B)-doped, and phosphorus (P)-doped silicon nanocrystals (Si NCs) formed from an excess Si concentration of 40 at. % were investigated to study their structural, optical, and electrical properties. Atom probe tomography (APT) revealed that the size and arrangement of Si NCs were different in each sample. A strong blue shift in photoluminescence spectra for the intrinsic and B-doped Si NCs was correlated with the volume fraction of small Si NCs. The lower resistivity of the B-doped sample than the P-doped one was explained by the percolation of Si NCs through the film.",

author = "Keita Nomoto and Yang, {Terry Chien-Jen} and Ceguerra, {Anna V.} and Andrew Breen and Lingfeng Wu and Xuguang Jia and Tian Zhang and Binesh Puthen-Veettil and Ziyun Lin and Simon Ringer and Gavin Conibeer and Ivan Perez-Wurfl",

year = "2016",

month = nov,

doi = "10.7567/APEX.9.115001",

language = "English",

volume = "9",

pages = "1--4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "11",

}

Nomoto, K, Yang, TC-J, Ceguerra, AV, Breen, A, Wu, L, Jia, X, Zhang, T, Puthen-Veettil, B, Lin, Z, Ringer, S, Conibeer, G & Perez-Wurfl, I 2016, 'Structural, optical, and electrical properties of silicon nanocrystals fabricated by high silicon content silicon-rich oxide and silicon dioxide bilayers', Applied Physics Express, vol. 9, no. 11, 115001, pp. 1-4. https://doi.org/10.7567/APEX.9.115001

TY - JOUR

T1 - Structural, optical, and electrical properties of silicon nanocrystals fabricated by high silicon content silicon-rich oxide and silicon dioxide bilayers

AU - Nomoto, Keita

AU - Yang, Terry Chien-Jen

AU - Ceguerra, Anna V.

AU - Breen, Andrew

AU - Wu, Lingfeng

AU - Jia, Xuguang

AU - Zhang, Tian

AU - Puthen-Veettil, Binesh

AU - Lin, Ziyun

AU - Ringer, Simon

AU - Conibeer, Gavin

AU - Perez-Wurfl, Ivan

PY - 2016/11

Y1 - 2016/11

N2 - Intrinsic, boron (B)-doped, and phosphorus (P)-doped silicon nanocrystals (Si NCs) formed from an excess Si concentration of 40 at. % were investigated to study their structural, optical, and electrical properties. Atom probe tomography (APT) revealed that the size and arrangement of Si NCs were different in each sample. A strong blue shift in photoluminescence spectra for the intrinsic and B-doped Si NCs was correlated with the volume fraction of small Si NCs. The lower resistivity of the B-doped sample than the P-doped one was explained by the percolation of Si NCs through the film.

AB - Intrinsic, boron (B)-doped, and phosphorus (P)-doped silicon nanocrystals (Si NCs) formed from an excess Si concentration of 40 at. % were investigated to study their structural, optical, and electrical properties. Atom probe tomography (APT) revealed that the size and arrangement of Si NCs were different in each sample. A strong blue shift in photoluminescence spectra for the intrinsic and B-doped Si NCs was correlated with the volume fraction of small Si NCs. The lower resistivity of the B-doped sample than the P-doped one was explained by the percolation of Si NCs through the film.

UR - http://www.scopus.com/inward/record.url?scp=84994180743&partnerID=8YFLogxK

U2 - 10.7567/APEX.9.115001

DO - 10.7567/APEX.9.115001

M3 - Letter

AN - SCOPUS:84994180743

VL - 9

SP - 1

EP - 4

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 11

M1 - 115001

ER -

Structural, optical, and electrical properties of silicon nanocrystals fabricated by high silicon content silicon-rich oxide and silicon dioxide bilayers

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