Abstract
In-situ high pressure (up to 20 GPa) energy-dispersive EXAFS as well as energy-and angle-dispersive powder diffraction have been used to study phase transformations in bulk amorphous GaSb and (GaSb)1-x(Ge2)x. Complex transitional behavior was observed. The amorphous-to-high pressure crystalline GaSb II phase transition starts at a pressure of ≈4 GPa, whereas the analogous transition in crystalline GaSb takes place at around 7 GPa. The abnormally large Debye-Waller factor for Ga nearest neighbors in the high pressure phase is interpreted in terms of the existence of an orthorhombic structure. In the solid solutions of GaSb with Ge the transition pressure shifts to higher values with increasing Ge concentration x.
Original language | English |
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Pages (from-to) | 503-508 |
Number of pages | 6 |
Journal | Physica Status Solidi B: Basic Solid State Physics |
Volume | 198 |
Issue number | 1 |
Publication status | Published - Nov 1996 |
Externally published | Yes |