Structural studies of multilayered Ge nanocrystals embedded in SiO2 matrix fabricated using magnetron sputtering

B. Zhang; S. Shrestha; S. J. Huang; P. Aliberti; M. A. Green; G. Conibeer

doi:10.1016/j.egypro.2010.07.035

Structural studies of multilayered Ge nanocrystals embedded in SiO₂ matrix fabricated using magnetron sputtering

B. Zhang^*, S. Shrestha, S. J. Huang, P. Aliberti, M. A. Green, G. Conibeer

^*Corresponding author for this work

Research output: Contribution to journal › Conference paper › peer-review

7 Citations (Scopus)

30 Downloads (Pure)

Abstract

Ge nanocrystals (Ge NCs) were grown in a multilayered superlattice structure using magnetron co-sputtering technology. Studies were taken to optimize the processing conditions including post-annealing temperature and duration. Structural properties of Ge NCs and multi-bilayers, such as crystallization process, precipitate crystallinity, size-control of nanocrystals and influence of interlayer diffusion, were particularly chosen to be investigated. The experimental results indicated that high quality and reproducible multilayered Ge NCs can be obtained with an appropriate thermal annealing condition. This investigation builds a technical foundation for fabrication of tandem solar cell applicable Ge NCs absorber films.

Original language	English
Pages (from-to)	243-250
Number of pages	8
Journal	Energy Procedia
Volume	2
Issue number	1
DOIs	https://doi.org/10.1016/j.egypro.2010.07.035
Publication status	Published - Aug 2010
Externally published	Yes
Event	Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting - Strasbourg, France Duration: 7 Jun 2009 → 12 Jun 2009

Bibliographical note

Copyright the Publisher 2010. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

Germanium
nanocrystals
quantum dots
SiO₂ matrix
superlattice
size-control
co-sputtering
tandem solar cells

Access to Document

10.1016/j.egypro.2010.07.035Licence: CC BY-NC-ND

Publisher version (open access)Final published version, 515 KBLicence: CC BY-NC-ND

Cite this

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title = "Structural studies of multilayered Ge nanocrystals embedded in SiO2 matrix fabricated using magnetron sputtering",

abstract = "Ge nanocrystals (Ge NCs) were grown in a multilayered superlattice structure using magnetron co-sputtering technology. Studies were taken to optimize the processing conditions including post-annealing temperature and duration. Structural properties of Ge NCs and multi-bilayers, such as crystallization process, precipitate crystallinity, size-control of nanocrystals and influence of interlayer diffusion, were particularly chosen to be investigated. The experimental results indicated that high quality and reproducible multilayered Ge NCs can be obtained with an appropriate thermal annealing condition. This investigation builds a technical foundation for fabrication of tandem solar cell applicable Ge NCs absorber films.",

keywords = "Germanium, nanocrystals, quantum dots, SiO₂ matrix, superlattice, size-control, co-sputtering, tandem solar cells",

author = "B. Zhang and S. Shrestha and Huang, {S. J.} and P. Aliberti and Green, {M. A.} and G. Conibeer",

note = "Copyright the Publisher 2010. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.; Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting ; Conference date: 07-06-2009 Through 12-06-2009",

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T1 - Structural studies of multilayered Ge nanocrystals embedded in SiO2 matrix fabricated using magnetron sputtering

AU - Zhang, B.

AU - Shrestha, S.

AU - Huang, S. J.

AU - Aliberti, P.

AU - Green, M. A.

AU - Conibeer, G.

N1 - Copyright the Publisher 2010. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2010/8

Y1 - 2010/8

N2 - Ge nanocrystals (Ge NCs) were grown in a multilayered superlattice structure using magnetron co-sputtering technology. Studies were taken to optimize the processing conditions including post-annealing temperature and duration. Structural properties of Ge NCs and multi-bilayers, such as crystallization process, precipitate crystallinity, size-control of nanocrystals and influence of interlayer diffusion, were particularly chosen to be investigated. The experimental results indicated that high quality and reproducible multilayered Ge NCs can be obtained with an appropriate thermal annealing condition. This investigation builds a technical foundation for fabrication of tandem solar cell applicable Ge NCs absorber films.

AB - Ge nanocrystals (Ge NCs) were grown in a multilayered superlattice structure using magnetron co-sputtering technology. Studies were taken to optimize the processing conditions including post-annealing temperature and duration. Structural properties of Ge NCs and multi-bilayers, such as crystallization process, precipitate crystallinity, size-control of nanocrystals and influence of interlayer diffusion, were particularly chosen to be investigated. The experimental results indicated that high quality and reproducible multilayered Ge NCs can be obtained with an appropriate thermal annealing condition. This investigation builds a technical foundation for fabrication of tandem solar cell applicable Ge NCs absorber films.

KW - Germanium

KW - nanocrystals

KW - quantum dots

KW - SiO₂ matrix

KW - superlattice

KW - size-control

KW - co-sputtering

KW - tandem solar cells

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DO - 10.1016/j.egypro.2010.07.035

M3 - Conference paper

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