Ge nanocrystals (Ge NCs) were grown in a multilayered superlattice structure using magnetron co-sputtering technology. Studies were taken to optimize the processing conditions including post-annealing temperature and duration. Structural properties of Ge NCs and multi-bilayers, such as crystallization process, precipitate crystallinity, size-control of nanocrystals and influence of interlayer diffusion, were particularly chosen to be investigated. The experimental results indicated that high quality and reproducible multilayered Ge NCs can be obtained with an appropriate thermal annealing condition. This investigation builds a technical foundation for fabrication of tandem solar cell applicable Ge NCs absorber films.
|Number of pages||8|
|Publication status||Published - Aug 2010|
|Event||Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting - Strasbourg, France|
Duration: 7 Jun 2009 → 12 Jun 2009
Bibliographical noteCopyright the Publisher 2010. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.
- quantum dots
- SiO₂ matrix
- tandem solar cells