Structural studies of semiconductor-to-metal transition in the bulk amorphous solid solutions (GaSb)1-x(Ge2)x under high pressure

A. V. Sapelkin*, S. C. Bayliss, A. G. Lyapin, V. V. Brazhkin, S. M. Clark, A. J. Dent, J. P. Itié, A. Polian

*Corresponding author for this work

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Abstract

The structural transformations during the pressure induced semiconductor to metal transition [1,2] in the bulk amorphous (GaSb)1-x(Ge2)x in a wide range of concentration x (x= 0-0.8) have been studied using energy-dispersive powder diffraction (EDPD). It was found that such a transition was accompanied by a structural transformation of the amorphous low pressure phase to the high pressure β-Sn phase. The transition pressure Ptr. for amorphous GaSb is less then that for crystalline GaSb by ΔP∼2 GPa and depends on the Ge concentration x.

Original languageEnglish
Pages (from-to)543-548
Number of pages6
JournalMaterials Science Forum
Volume228-231
Issue numberPART 2
Publication statusPublished - 1996
Externally publishedYes

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