The structural transformations during the pressure induced semiconductor to metal transition [1,2] in the bulk amorphous (GaSb)1-x(Ge2)x in a wide range of concentration x (x= 0-0.8) have been studied using energy-dispersive powder diffraction (EDPD). It was found that such a transition was accompanied by a structural transformation of the amorphous low pressure phase to the high pressure β-Sn phase. The transition pressure Ptr. for amorphous GaSb is less then that for crystalline GaSb by ΔP∼2 GPa and depends on the Ge concentration x.
|Number of pages||6|
|Journal||Materials Science Forum|
|Issue number||PART 2|
|Publication status||Published - 1996|