Structural studies of semiconductor-to-metal transition in the bulk amorphous solid solutions (GaSb)1-x(Ge2)x under high pressure

A. V. Sapelkin; S. C. Bayliss; A. G. Lyapin; V. V. Brazhkin; S. M. Clark; A. J. Dent; J. P. Itié; A. Polian

Structural studies of semiconductor-to-metal transition in the bulk amorphous solid solutions (GaSb)_1-x(Ge₂)_x under high pressure

A. V. Sapelkin^*, S. C. Bayliss, A. G. Lyapin, V. V. Brazhkin, S. M. Clark, A. J. Dent, J. P. Itié, A. Polian

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The structural transformations during the pressure induced semiconductor to metal transition [1,2] in the bulk amorphous (GaSb)_1-x(Ge₂)_x in a wide range of concentration x (x= 0-0.8) have been studied using energy-dispersive powder diffraction (EDPD). It was found that such a transition was accompanied by a structural transformation of the amorphous low pressure phase to the high pressure β-Sn phase. The transition pressure P_tr. for amorphous GaSb is less then that for crystalline GaSb by ΔP∼2 GPa and depends on the Ge concentration x.

Original language	English
Pages (from-to)	543-548
Number of pages	6
Journal	Materials Science Forum
Volume	228-231
Issue number	PART 2
Publication status	Published - 1996
Externally published	Yes

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title = "Structural studies of semiconductor-to-metal transition in the bulk amorphous solid solutions (GaSb)1-x(Ge2)x under high pressure",

abstract = "The structural transformations during the pressure induced semiconductor to metal transition [1,2] in the bulk amorphous (GaSb)1-x(Ge2)x in a wide range of concentration x (x= 0-0.8) have been studied using energy-dispersive powder diffraction (EDPD). It was found that such a transition was accompanied by a structural transformation of the amorphous low pressure phase to the high pressure β-Sn phase. The transition pressure Ptr. for amorphous GaSb is less then that for crystalline GaSb by ΔP∼2 GPa and depends on the Ge concentration x.",

author = "Sapelkin, {A. V.} and Bayliss, {S. C.} and Lyapin, {A. G.} and Brazhkin, {V. V.} and Clark, {S. M.} and Dent, {A. J.} and Iti{\'e}, {J. P.} and A. Polian",

year = "1996",

language = "English",

volume = "228-231",

pages = "543--548",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "PART 2",

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TY - JOUR

T1 - Structural studies of semiconductor-to-metal transition in the bulk amorphous solid solutions (GaSb)1-x(Ge2)x under high pressure

AU - Sapelkin, A. V.

AU - Bayliss, S. C.

AU - Lyapin, A. G.

AU - Brazhkin, V. V.

AU - Clark, S. M.

AU - Dent, A. J.

AU - Itié, J. P.

AU - Polian, A.

PY - 1996

Y1 - 1996

N2 - The structural transformations during the pressure induced semiconductor to metal transition [1,2] in the bulk amorphous (GaSb)1-x(Ge2)x in a wide range of concentration x (x= 0-0.8) have been studied using energy-dispersive powder diffraction (EDPD). It was found that such a transition was accompanied by a structural transformation of the amorphous low pressure phase to the high pressure β-Sn phase. The transition pressure Ptr. for amorphous GaSb is less then that for crystalline GaSb by ΔP∼2 GPa and depends on the Ge concentration x.

AB - The structural transformations during the pressure induced semiconductor to metal transition [1,2] in the bulk amorphous (GaSb)1-x(Ge2)x in a wide range of concentration x (x= 0-0.8) have been studied using energy-dispersive powder diffraction (EDPD). It was found that such a transition was accompanied by a structural transformation of the amorphous low pressure phase to the high pressure β-Sn phase. The transition pressure Ptr. for amorphous GaSb is less then that for crystalline GaSb by ΔP∼2 GPa and depends on the Ge concentration x.

UR - http://www.scopus.com/inward/record.url?scp=0030408462&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030408462

VL - 228-231

SP - 543

EP - 548

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - PART 2

ER -

Structural studies of semiconductor-to-metal transition in the bulk amorphous solid solutions (GaSb)_1-x(Ge₂)_x under high pressure

Abstract

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