In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.
|Number of pages||4|
|Journal||Acta Physica Polonica A|
|Publication status||Published - Sep 1998|
|Event||XXVII International School on Physics of Semiconducting Compounds - JASZOWIEC, Poland|
Duration: 7 Jun 1998 → 12 Jun 1998