Structure, surface morphology and optical properties of thin films of ZnS and CdS grown by atomic layer epitaxy

A. Szczerbakow; M. Godlewski; E. Dynowska; V. Yu Ivanov; K Swiatek; Ewa Goldys; MR Phillips

Structure, surface morphology and optical properties of thin films of ZnS and CdS grown by atomic layer epitaxy

A. Szczerbakow, M. Godlewski, E. Dynowska, V. Yu Ivanov, K Swiatek, Ewa Goldys, MR Phillips

Research output: Contribution to journal › Article › peer-review

Abstract

In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.

Original language	English
Pages (from-to)	579-582
Number of pages	4
Journal	Acta Physica Polonica A
Volume	94
Issue number	3
Publication status	Published - Sept 1998
Event	XXVII International School on Physics of Semiconducting Compounds - JASZOWIEC, Poland Duration: 7 Jun 1998 → 12 Jun 1998

Cite this

@article{079e35fb7d7541f982e24ac89ceed564,

title = "Structure, surface morphology and optical properties of thin films of ZnS and CdS grown by atomic layer epitaxy",

abstract = "In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.",

author = "A. Szczerbakow and M. Godlewski and E. Dynowska and Ivanov, {V. Yu} and K Swiatek and Ewa Goldys and MR Phillips",

year = "1998",

month = sep,

language = "English",

volume = "94",

pages = "579--582",

journal = "Acta Physica Polonica A",

issn = "0587-4246",

publisher = "Pa{\'n}stwowe Wydawnictwo Naukowe",

number = "3",

note = "XXVII International School on Physics of Semiconducting Compounds ; Conference date: 07-06-1998 Through 12-06-1998",

}

TY - JOUR

T1 - Structure, surface morphology and optical properties of thin films of ZnS and CdS grown by atomic layer epitaxy

AU - Szczerbakow, A.

AU - Godlewski, M.

AU - Dynowska, E.

AU - Ivanov, V. Yu

AU - Swiatek, K

AU - Goldys, Ewa

AU - Phillips, MR

PY - 1998/9

Y1 - 1998/9

N2 - In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.

AB - In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.

M3 - Article

SN - 0587-4246

VL - 94

SP - 579

EP - 582

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

IS - 3

T2 - XXVII International School on Physics of Semiconducting Compounds

Y2 - 7 June 1998 through 12 June 1998

ER -

Structure, surface morphology and optical properties of thin films of ZnS and CdS grown by atomic layer epitaxy

Abstract

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