TY - JOUR
T1 - Studies on Ru/3C-SiC Schottky junctions for high temperature hydrogen sensors
AU - Roy, S.
AU - Jacob, C.
AU - Lang, C.
AU - Basu, S.
PY - 2003/7
Y1 - 2003/7
N2 - The sensor response behavior of the Ru/3C-SiC (epilayer on Si substrate) Schottky junctions was studied at different temperatures in presence of hydrogen gas with concentrations varying from 5,000 ppm to 20,000 ppm. The output signal of the sensors, the response time, and the reversibility were investigated from the transient response characteristics of the sensors. The sensor parameters were found to improve with higher operating temperature, up to 400°C, above which they degrade due to the influence of thermally generated carriers in the Si substrate. The sensitivity was found to be a function of applied bias across the junction. As compared to the Pd/3C-SiC junctions, the Ru/3C-SiC Schottky sensors showed better resolution in the hydrogen concentration range between 10,000 and 20,000 ppm. Also, the Ru/3C-SiC sensors showed better reversibility. The secondary ion mass spectrometry study indicates that the Ru/3C-SiC Schottky sensors can be operated at 400°C without any significant degradation of the interface.
AB - The sensor response behavior of the Ru/3C-SiC (epilayer on Si substrate) Schottky junctions was studied at different temperatures in presence of hydrogen gas with concentrations varying from 5,000 ppm to 20,000 ppm. The output signal of the sensors, the response time, and the reversibility were investigated from the transient response characteristics of the sensors. The sensor parameters were found to improve with higher operating temperature, up to 400°C, above which they degrade due to the influence of thermally generated carriers in the Si substrate. The sensitivity was found to be a function of applied bias across the junction. As compared to the Pd/3C-SiC junctions, the Ru/3C-SiC Schottky sensors showed better resolution in the hydrogen concentration range between 10,000 and 20,000 ppm. Also, the Ru/3C-SiC sensors showed better reversibility. The secondary ion mass spectrometry study indicates that the Ru/3C-SiC Schottky sensors can be operated at 400°C without any significant degradation of the interface.
UR - http://www.scopus.com/inward/record.url?scp=0037870689&partnerID=8YFLogxK
U2 - 10.1149/1.1573202
DO - 10.1149/1.1573202
M3 - Article
AN - SCOPUS:0037870689
SN - 0013-4651
VL - 150
SP - H135-H139
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 6
ER -