Abstract
AlxGa1-xSb films in the regime 0 ≤ x ≤ 0.25 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa, and TMSb precursors. We report growth conditions and film properties, including the effect of V/III ratio and growth temperature on electrical and optical properties. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. All epilayers grown exhibit p-type behaviour. The mobility decreases and the carrier concentration increases sharply when a small amount of Al is incorporated into GaSb. The sharp cutoff and Fabry-Perot oscillations of the transmission spectra of the AlGaSb layers confirm the high quality of the films. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.
Original language | English |
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Pages (from-to) | 965-971 |
Number of pages | 7 |
Journal | Journal of Electronic Materials |
Volume | 30 |
Issue number | 8 |
Publication status | Published - Aug 2001 |