Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition

A. H. Ramelan*, K. Drozdowicz-Tomsia, E. M. Goldys, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


AlxGa1-xSb films in the regime 0 ≤ x ≤ 0.25 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa, and TMSb precursors. We report growth conditions and film properties, including the effect of V/III ratio and growth temperature on electrical and optical properties. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. All epilayers grown exhibit p-type behaviour. The mobility decreases and the carrier concentration increases sharply when a small amount of Al is incorporated into GaSb. The sharp cutoff and Fabry-Perot oscillations of the transmission spectra of the AlGaSb layers confirm the high quality of the films. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.

Original languageEnglish
Pages (from-to)965-971
Number of pages7
JournalJournal of Electronic Materials
Issue number8
Publication statusPublished - Aug 2001


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