Study of optical and electrical properties of GaSb/AlxGa1-xSb grown by MOCVD

A. H. Ramelan, K. Drozdowicz-Tomsia, E. M. Goldys, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and AlxGa1-xSb in the regime xles/0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and AlxGa1-xSb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520°C to 680°C and V/III ratios between 1 to 5 have been investigated.

Original languageEnglish
Title of host publication2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages209-212
Number of pages4
Volume2000-January
ISBN (Electronic)0780358147
DOIs
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 3 Jul 20007 Jul 2000

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
CountryAustralia
CityCanberra
Period3/07/007/07/00

Keywords

  • Australia
  • Chemical technology
  • Chemical vapor deposition
  • Epitaxial growth
  • High speed optical techniques
  • III-V semiconductor materials
  • Laboratories
  • MOCVD
  • Molecular beam epitaxial growth
  • Optical materials

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