Study of optical and electrical properties of GaSb/AlxGa1-xSb grown by MOCVD

A. H. Ramelan; K. Drozdowicz-Tomsia; E. M. Goldys; T. L. Tansley

doi:10.1109/SIM.2000.939228

Study of optical and electrical properties of GaSb/Al_xGa_1-xSb grown by MOCVD

A. H. Ramelan, K. Drozdowicz-Tomsia, E. M. Goldys, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and Al_xGa_1-xSb in the regime xles/0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and Al_xGa_1-xSb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520°C to 680°C and V/III ratios between 1 to 5 have been investigated.

Original language	English
Title of host publication	2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	209-212
Number of pages	4
Volume	2000-January
ISBN (Electronic)	0780358147
DOIs	https://doi.org/10.1109/SIM.2000.939228
Publication status	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: 3 Jul 2000 → 7 Jul 2000

Other

Other	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	3/07/00 → 7/07/00

Keywords

Australia
Chemical technology
Chemical vapor deposition
Epitaxial growth
High speed optical techniques
III-V semiconductor materials
Laboratories
MOCVD
Molecular beam epitaxial growth
Optical materials

Access to Document

10.1109/SIM.2000.939228

Cite this

Ramelan, A. H., Drozdowicz-Tomsia, K., Goldys, E. M., & Tansley, T. L. (2000). Study of optical and electrical properties of GaSb/Al_xGa_1-xSb grown by MOCVD. In 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000 (Vol. 2000-January, pp. 209-212). Article 939228 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SIM.2000.939228

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abstract = "We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and AlxGa1-xSb in the regime xles/0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and AlxGa1-xSb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520°C to 680°C and V/III ratios between 1 to 5 have been investigated.",

keywords = "Australia, Chemical technology, Chemical vapor deposition, Epitaxial growth, High speed optical techniques, III-V semiconductor materials, Laboratories, MOCVD, Molecular beam epitaxial growth, Optical materials",

author = "Ramelan, {A. H.} and K. Drozdowicz-Tomsia and Goldys, {E. M.} and Tansley, {T. L.}",

year = "2000",

doi = "10.1109/SIM.2000.939228",

language = "English",

volume = "2000-January",

pages = "209--212",

booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

}

Ramelan, AH, Drozdowicz-Tomsia, K, Goldys, EM & Tansley, TL 2000, Study of optical and electrical properties of GaSb/Al_xGa_1-xSb grown by MOCVD. in 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. vol. 2000-January, 939228, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 209-212, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 3/07/00. https://doi.org/10.1109/SIM.2000.939228

Study of optical and electrical properties of GaSb/Al_xGa_1-xSb grown by MOCVD. / Ramelan, A. H.; Drozdowicz-Tomsia, K.; Goldys, E. M. et al.
2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Vol. 2000-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 209-212 939228.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Ramelan, A. H.

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AU - Goldys, E. M.

AU - Tansley, T. L.

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AB - We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and AlxGa1-xSb in the regime xles/0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and AlxGa1-xSb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520°C to 680°C and V/III ratios between 1 to 5 have been investigated.

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KW - Chemical technology

KW - Chemical vapor deposition

KW - Epitaxial growth

KW - High speed optical techniques

KW - III-V semiconductor materials

KW - Laboratories

KW - MOCVD

KW - Molecular beam epitaxial growth

KW - Optical materials

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M3 - Conference proceeding contribution

AN - SCOPUS:84950150073

VL - 2000-January

SP - 209

EP - 212

BT - 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

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