Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis

Bryan Schwitter*, Sayed Albahrani, Tony Parker, Lawrence Dunleavy, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

A pulsed I-V thermal resistance R-th measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement. It is found that performing the R-th measurement using two quiescent bias points in close proximity (situated beyond the knee voltage yet prior to drain voltages that result in significant levels of gate leakage due to impact ionization) improves the accuracy of the method. Extraction of thermal coefficients characterizes the drain current reduction due to heating, allowing for an efficient calculation of R-th with improved precision.

Original languageEnglish
Title of host publication2013 81st ARFTG Microwave Measurement Conference (ARFTG)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-6
Number of pages6
ISBN (Electronic)9781467349833, 9781467349826
ISBN (Print)9781467349819
DOIs
Publication statusPublished - 2013
Event81st ARFTG Microwave Measurement Conference on Metrology for High Speed Circuits and Systems - Seattle
Duration: 7 Jun 2013 → …

Conference

Conference81st ARFTG Microwave Measurement Conference on Metrology for High Speed Circuits and Systems
CitySeattle
Period7/06/13 → …

Keywords

  • HEMTs
  • MMICs
  • pulse measurements
  • temperature measurement
  • thermal resistance

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