Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis

Bryan Schwitter; Sayed Albahrani; Tony Parker; Lawrence Dunleavy; Michael Heimlich

doi:10.1109/ARFTG.2013.6579042

Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis

Bryan Schwitter^*, Sayed Albahrani, Tony Parker, Lawrence Dunleavy, Michael Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

A pulsed I-V thermal resistance R-th measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement. It is found that performing the R-th measurement using two quiescent bias points in close proximity (situated beyond the knee voltage yet prior to drain voltages that result in significant levels of gate leakage due to impact ionization) improves the accuracy of the method. Extraction of thermal coefficients characterizes the drain current reduction due to heating, allowing for an efficient calculation of R-th with improved precision.

Original language	English
Title of host publication	2013 81st ARFTG Microwave Measurement Conference (ARFTG)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781467349833, 9781467349826
ISBN (Print)	9781467349819
DOIs	https://doi.org/10.1109/ARFTG.2013.6579042
Publication status	Published - 2013
Event	81st ARFTG Microwave Measurement Conference on Metrology for High Speed Circuits and Systems - Seattle Duration: 7 Jun 2013 → …

Conference

Conference	81st ARFTG Microwave Measurement Conference on Metrology for High Speed Circuits and Systems
City	Seattle
Period	7/06/13 → …

Keywords

HEMTs
MMICs
pulse measurements
temperature measurement
thermal resistance

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10.1109/ARFTG.2013.6579042

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@inproceedings{17b1daac2cb84e50bfcb67dbe8eb5858,

title = "Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis",

abstract = "A pulsed I-V thermal resistance R-th measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement. It is found that performing the R-th measurement using two quiescent bias points in close proximity (situated beyond the knee voltage yet prior to drain voltages that result in significant levels of gate leakage due to impact ionization) improves the accuracy of the method. Extraction of thermal coefficients characterizes the drain current reduction due to heating, allowing for an efficient calculation of R-th with improved precision.",

keywords = "HEMTs, MMICs, pulse measurements, temperature measurement, thermal resistance",

author = "Bryan Schwitter and Sayed Albahrani and Tony Parker and Lawrence Dunleavy and Michael Heimlich",

year = "2013",

doi = "10.1109/ARFTG.2013.6579042",

language = "English",

isbn = "9781467349819",

pages = "1--6",

booktitle = "2013 81st ARFTG Microwave Measurement Conference (ARFTG)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "81st ARFTG Microwave Measurement Conference on Metrology for High Speed Circuits and Systems ; Conference date: 07-06-2013",

}

Schwitter, B, Albahrani, S, Parker, T, Dunleavy, L & Heimlich, M 2013, Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis. in 2013 81st ARFTG Microwave Measurement Conference (ARFTG). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-6, 81st ARFTG Microwave Measurement Conference on Metrology for High Speed Circuits and Systems, Seattle, 7/06/13. https://doi.org/10.1109/ARFTG.2013.6579042

Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis. / Schwitter, Bryan; Albahrani, Sayed; Parker, Tony et al.
2013 81st ARFTG Microwave Measurement Conference (ARFTG). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 1-6.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis

AU - Schwitter, Bryan

AU - Albahrani, Sayed

AU - Parker, Tony

AU - Dunleavy, Lawrence

AU - Heimlich, Michael

PY - 2013

Y1 - 2013

N2 - A pulsed I-V thermal resistance R-th measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement. It is found that performing the R-th measurement using two quiescent bias points in close proximity (situated beyond the knee voltage yet prior to drain voltages that result in significant levels of gate leakage due to impact ionization) improves the accuracy of the method. Extraction of thermal coefficients characterizes the drain current reduction due to heating, allowing for an efficient calculation of R-th with improved precision.

AB - A pulsed I-V thermal resistance R-th measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement. It is found that performing the R-th measurement using two quiescent bias points in close proximity (situated beyond the knee voltage yet prior to drain voltages that result in significant levels of gate leakage due to impact ionization) improves the accuracy of the method. Extraction of thermal coefficients characterizes the drain current reduction due to heating, allowing for an efficient calculation of R-th with improved precision.

KW - HEMTs

KW - MMICs

KW - pulse measurements

KW - temperature measurement

KW - thermal resistance

U2 - 10.1109/ARFTG.2013.6579042

DO - 10.1109/ARFTG.2013.6579042

M3 - Conference proceeding contribution

SN - 9781467349819

SP - 1

EP - 6

BT - 2013 81st ARFTG Microwave Measurement Conference (ARFTG)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 81st ARFTG Microwave Measurement Conference on Metrology for High Speed Circuits and Systems

Y2 - 7 June 2013

ER -

Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis

Abstract

Conference

Keywords

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