Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths

Engineering & Materials Science

• Wavelength 98%
• Molecular beam epitaxy 69%
• Nanostructures 54%
• Photons 53%
• Reflection high energy electron diffraction 46%
• Characterization (materials science) 39%
• Ground state 33%
• Optical properties 27%
• Nucleation 23%

Chemistry

• Quantum Dot 100%
• Wavelength 80%
• Buffer Solution 43%
• Photon 43%
• Reflection High Energy Electron Diffraction 36%
• Nanomaterial 28%
• Surface Density 26%
• Statistical Ensemble 22%
• Nucleation 18%
• Ground State 17%
• Optical Property 16%
• Surface 7%

Physics & Astronomy

• quantum dots 87%
• buffers 56%
• wavelengths 53%
• characterization 50%
• photons 24%
• positioning 22%
• high energy electrons 22%
• electron diffraction 19%
• atomic force microscopy 17%
• nucleation 16%
• ground state 14%
• optical properties 14%