Sulfur contamination of (100) GaAs resulting from sample preparation procedures and atmospheric exposure

K. S. A. Butcher; R. J. Egan; T. L. Tansley; D. Alexiev

doi:10.1116/1.589018

Sulfur contamination of (100) GaAs resulting from sample preparation procedures and atmospheric exposure

K. S. A. Butcher, R. J. Egan, T. L. Tansley, D. Alexiev

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Abstract

X-ray photoelectron spectroscopy with argon ion depth profiling was employed to investigate sulfur deposition from a standard 3H₂SO₄:H₂O₂:H₂O etchant onto (100) GaAs. From these experiments it appears that etching with 3H₂SO₄:H₂O₂:H₂O leaves a mixed sulfide/oxide layer, with free sulfur at the top surface of this layer. The sulfide within the layer was found to be bound to gallium, and recognition of the presence of sulfur allowed the clarification of the Ga(3d) photoelectron peak position for Ga₂O₃. No evidence of sulfate formation was found. Removal of the sulfur contamination using a solution of HCl:H₂O was investigated. Also, atmospheric contamination of samples exposed to room conditions for six months was observed.

Original language	English
Pages (from-to)	152-158
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	1
DOIs	https://doi.org/10.1116/1.589018
Publication status	Published - Jan 1996

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title = "Sulfur contamination of (100) GaAs resulting from sample preparation procedures and atmospheric exposure",

abstract = "X-ray photoelectron spectroscopy with argon ion depth profiling was employed to investigate sulfur deposition from a standard 3H2SO4:H2O2:H2O etchant onto (100) GaAs. From these experiments it appears that etching with 3H2SO4:H2O2:H2O leaves a mixed sulfide/oxide layer, with free sulfur at the top surface of this layer. The sulfide within the layer was found to be bound to gallium, and recognition of the presence of sulfur allowed the clarification of the Ga(3d) photoelectron peak position for Ga2O3. No evidence of sulfate formation was found. Removal of the sulfur contamination using a solution of HCl:H2O was investigated. Also, atmospheric contamination of samples exposed to room conditions for six months was observed.",

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T1 - Sulfur contamination of (100) GaAs resulting from sample preparation procedures and atmospheric exposure

AU - Butcher, K. S. A.

AU - Egan, R. J.

AU - Tansley, T. L.

AU - Alexiev, D.

PY - 1996/1

Y1 - 1996/1

N2 - X-ray photoelectron spectroscopy with argon ion depth profiling was employed to investigate sulfur deposition from a standard 3H2SO4:H2O2:H2O etchant onto (100) GaAs. From these experiments it appears that etching with 3H2SO4:H2O2:H2O leaves a mixed sulfide/oxide layer, with free sulfur at the top surface of this layer. The sulfide within the layer was found to be bound to gallium, and recognition of the presence of sulfur allowed the clarification of the Ga(3d) photoelectron peak position for Ga2O3. No evidence of sulfate formation was found. Removal of the sulfur contamination using a solution of HCl:H2O was investigated. Also, atmospheric contamination of samples exposed to room conditions for six months was observed.

AB - X-ray photoelectron spectroscopy with argon ion depth profiling was employed to investigate sulfur deposition from a standard 3H2SO4:H2O2:H2O etchant onto (100) GaAs. From these experiments it appears that etching with 3H2SO4:H2O2:H2O leaves a mixed sulfide/oxide layer, with free sulfur at the top surface of this layer. The sulfide within the layer was found to be bound to gallium, and recognition of the presence of sulfur allowed the clarification of the Ga(3d) photoelectron peak position for Ga2O3. No evidence of sulfate formation was found. Removal of the sulfur contamination using a solution of HCl:H2O was investigated. Also, atmospheric contamination of samples exposed to room conditions for six months was observed.

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ER -

Sulfur contamination of (100) GaAs resulting from sample preparation procedures and atmospheric exposure

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