Surface degradation of InxGa1-xN thin films by sputter-anneal processing

A scanning photoemission microscope study

James E. Downes, Kevin E. Smith*, A. Y. Matsuura, Ingolf Lindau, Eleftherios Iliopoulos, Theodore D. Moustakas

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Citations (Scopus)


The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.

Original languageEnglish
Pages (from-to)5820-5825
Number of pages6
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 1 Nov 2003
Externally publishedYes

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