Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study

James E. Downes; Kevin E. Smith; A. Y. Matsuura; Ingolf Lindau; Eleftherios Iliopoulos; Theodore D. Moustakas

doi:10.1063/1.1617356

Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study

James E. Downes, Kevin E. Smith^*, A. Y. Matsuura, Ingolf Lindau, Eleftherios Iliopoulos, Theodore D. Moustakas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In _0.12Ga_0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.

Original language	English
Pages (from-to)	5820-5825
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.1617356
Publication status	Published - 1 Nov 2003
Externally published	Yes

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abstract = "The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.",

author = "Downes, {James E.} and Smith, {Kevin E.} and Matsuura, {A. Y.} and Ingolf Lindau and Eleftherios Iliopoulos and Moustakas, {Theodore D.}",

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T2 - A scanning photoemission microscope study

AU - Downes, James E.

AU - Smith, Kevin E.

AU - Matsuura, A. Y.

AU - Lindau, Ingolf

AU - Iliopoulos, Eleftherios

AU - Moustakas, Theodore D.

PY - 2003/11/1

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N2 - The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.

AB - The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.

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DO - 10.1063/1.1617356

M3 - Article

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EP - 5825

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Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study

Abstract

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