Abstract
The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.
Original language | English |
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Pages (from-to) | 5820-5825 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1 Nov 2003 |
Externally published | Yes |