Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study

James E. Downes; Kevin E. Smith; A. Y. Matsuura; Ingolf Lindau; Eleftherios Iliopoulos; Theodore D. Moustakas

doi:10.1063/1.1617356

Surface degradation of InxGa1-xN thin films by sputter-anneal processing

A scanning photoemission microscope study

James E. Downes, Kevin E. Smith^*, A. Y. Matsuura, Ingolf Lindau, Eleftherios Iliopoulos, Theodore D. Moustakas

^*Corresponding author for this work

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In _0.12Ga_0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.

Original language	English
Pages (from-to)	5820-5825
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.1617356
Publication status	Published - 1 Nov 2003
Externally published	Yes

Access to Document

10.1063/1.1617356

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study'. Together they form a unique fingerprint.

Cite this

Downes, J. E., Smith, K. E., Matsuura, A. Y., Lindau, I., Iliopoulos, E., & Moustakas, T. D. (2003). Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study. Journal of Applied Physics, 94(9), 5820-5825. https://doi.org/10.1063/1.1617356

@article{ba9dd5ec0e944edd8c475f3e5c37f757,

title = "Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study",

abstract = "The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.",

author = "Downes, {James E.} and Smith, {Kevin E.} and Matsuura, {A. Y.} and Ingolf Lindau and Eleftherios Iliopoulos and Moustakas, {Theodore D.}",

year = "2003",

month = "11",

day = "1",

doi = "10.1063/1.1617356",

language = "English",

volume = "94",

pages = "5820--5825",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Surface degradation of InxGa1-xN thin films by sputter-anneal processing

T2 - A scanning photoemission microscope study

AU - Downes, James E.

AU - Smith, Kevin E.

AU - Matsuura, A. Y.

AU - Lindau, Ingolf

AU - Iliopoulos, Eleftherios

AU - Moustakas, Theodore D.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.

AB - The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In 0.12Ga0.88N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.

UR - http://www.scopus.com/inward/record.url?scp=0242636852&partnerID=8YFLogxK

U2 - 10.1063/1.1617356

DO - 10.1063/1.1617356

M3 - Article

VL - 94

SP - 5820

EP - 5825

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -