Surface electronic structure of p-type GaN(0001̄)

Philip Ryan; Y. C. Chao; James Downes; Cormac McGuinness; Kevin E. Smith; Anand V. Sampath; Theodore D. Moustakas

doi:10.1016/S0039-6028(00)00820-7

Surface electronic structure of p-type GaN(0001̄)

Philip Ryan, Y. C. Chao, James Downes, Cormac McGuinness, Kevin E. Smith, Anand V. Sampath, Theodore D. Moustakas

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The surface electronic structure of p-type wurtzite GaN(0001̄) 1×1 grown by molecular beam epitaxy has been investigated using synchrotron radiation excited angle resolved photoemission spectroscopy. Four discrete surface states were clearly identified and characterized. All the states were removed by exposure of the surface to atomic hydrogen. Three of the states were of p_z orbital character, while the fourth is derived from s orbitals. Three of the surface states lie below the bulk valence band maximum throughout the surface Brillouin zone, and one surface state was observed to disperse into the bulk optical band gap. Comparison with theory suggests that this surface state is Ga-derived, consistent with a model of Ga-terminated, but N polar, GaN. The other three surface states compare well with states observed earlier from n-type GaN.

Original language	English
Pages (from-to)	L827-L833
Number of pages	7
Journal	Surface Science
Volume	467
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(00)00820-7
Publication status	Published - 10 Nov 2000
Externally published	Yes

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title = "Surface electronic structure of p-type GaN(000{\=1})",

abstract = "The surface electronic structure of p-type wurtzite GaN(000{\=1}) 1×1 grown by molecular beam epitaxy has been investigated using synchrotron radiation excited angle resolved photoemission spectroscopy. Four discrete surface states were clearly identified and characterized. All the states were removed by exposure of the surface to atomic hydrogen. Three of the states were of pz orbital character, while the fourth is derived from s orbitals. Three of the surface states lie below the bulk valence band maximum throughout the surface Brillouin zone, and one surface state was observed to disperse into the bulk optical band gap. Comparison with theory suggests that this surface state is Ga-derived, consistent with a model of Ga-terminated, but N polar, GaN. The other three surface states compare well with states observed earlier from n-type GaN.",

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TY - JOUR

T1 - Surface electronic structure of p-type GaN(0001̄)

AU - Ryan, Philip

AU - Chao, Y. C.

AU - Downes, James

AU - McGuinness, Cormac

AU - Smith, Kevin E.

AU - Sampath, Anand V.

AU - Moustakas, Theodore D.

PY - 2000/11/10

Y1 - 2000/11/10

N2 - The surface electronic structure of p-type wurtzite GaN(0001̄) 1×1 grown by molecular beam epitaxy has been investigated using synchrotron radiation excited angle resolved photoemission spectroscopy. Four discrete surface states were clearly identified and characterized. All the states were removed by exposure of the surface to atomic hydrogen. Three of the states were of pz orbital character, while the fourth is derived from s orbitals. Three of the surface states lie below the bulk valence band maximum throughout the surface Brillouin zone, and one surface state was observed to disperse into the bulk optical band gap. Comparison with theory suggests that this surface state is Ga-derived, consistent with a model of Ga-terminated, but N polar, GaN. The other three surface states compare well with states observed earlier from n-type GaN.

AB - The surface electronic structure of p-type wurtzite GaN(0001̄) 1×1 grown by molecular beam epitaxy has been investigated using synchrotron radiation excited angle resolved photoemission spectroscopy. Four discrete surface states were clearly identified and characterized. All the states were removed by exposure of the surface to atomic hydrogen. Three of the states were of pz orbital character, while the fourth is derived from s orbitals. Three of the surface states lie below the bulk valence band maximum throughout the surface Brillouin zone, and one surface state was observed to disperse into the bulk optical band gap. Comparison with theory suggests that this surface state is Ga-derived, consistent with a model of Ga-terminated, but N polar, GaN. The other three surface states compare well with states observed earlier from n-type GaN.

UR - http://www.scopus.com/inward/record.url?scp=0034324253&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(00)00820-7

DO - 10.1016/S0039-6028(00)00820-7

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AN - SCOPUS:0034324253

VL - 467

SP - L827-L833

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -

Surface electronic structure of p-type GaN(0001̄)

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