Surface morphology of transparent conductive ZnO film grown by DC sputtering method

Kenji Yoshino, Masaki Tanaka, Akiko Ide, Stuart A. Boden, Darren M. Bagnall, Munoru Yoneta

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

5 Citations (Scopus)

Abstract

The growth of (0002) orientated polycrystalline undoped and Ga-doped ZnO films by DC sputtering under Ar is described. The (0002) peak intensity decreases with increasing substrate temperature in both doped and undoped samples. The average grain sizes are very small. This indicates that ZnO films with low crystallinity are obtained at high substrate temperatures. It is deduced that surface damage can be increased by high energy plasmas of neutral Ar particles at high substrate temperatures. The average surface roughness for both undoped and Ga-doped ZnO films decreases with increasing substrate temperatures. It is deduced that energies of sputter particles decrease with increasing substrate temperatures due to collisions with Ar particles. The surface roughness corresponds well to the structure model.

Original languageEnglish
Title of host publicationAdvanced Materials Research IV
Pages403-407
Number of pages5
Volume894
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event2014 4th International Conference on Advanced Materials Research, ICAMR 2014 - Macau, China
Duration: 22 Jan 201423 Jan 2014

Publication series

NameAdvanced Materials Research
Volume894
ISSN (Print)1022-6680

Conference

Conference2014 4th International Conference on Advanced Materials Research, ICAMR 2014
CountryChina
CityMacau
Period22/01/1423/01/14

Keywords

  • AFM
  • Semiconductor
  • Surface morphology
  • TCO
  • ZnO

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