Abstract
In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole-Frenkel emission are two dominant mechanisms for the gate current in the forward and reverse-bias regions, respectively. In addition, a trap-assisted tunneling component, which is important at low reverse bias, is also added. The developed gate current model, implemented in Verilog-A is in excellent agreement with experimental data and passes the important Gummel symmetry test.
Original language | English |
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Pages (from-to) | 443-448 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 2015 |
Externally published | Yes |
Keywords
- Compact model
- GaN high-electron mobility transistor (HEMT)
- Gate leakage current
- Poole-Frenkel (PF) emission