Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs

Sudip Ghosh, Avirup Dasgupta, Sourabh Khandelwal, Shantanu Agnihotri, Yogesh Singh Chauhan

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole-Frenkel emission are two dominant mechanisms for the gate current in the forward and reverse-bias regions, respectively. In addition, a trap-assisted tunneling component, which is important at low reverse bias, is also added. The developed gate current model, implemented in Verilog-A is in excellent agreement with experimental data and passes the important Gummel symmetry test.

Original languageEnglish
Pages (from-to)443-448
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 1 Feb 2015
Externally publishedYes


  • Compact model
  • GaN high-electron mobility transistor (HEMT)
  • Gate leakage current
  • Poole-Frenkel (PF) emission


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