Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation

Avirup Dasgupta; Sourabh Khandelwal; Yogesh Singh Chauhan

doi:10.1109/LMWC.2015.2422472

Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation

Avirup Dasgupta, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface potential formulation for charges and current. The model is tunable and applicable to any HEMT device.

Original language	English
Article number	7095620
Pages (from-to)	376-378
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	25
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2015.2422472
Publication status	Published - 1 Jun 2015
Externally published	Yes

Keywords

HEMT
noise model
thermal noise

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10.1109/LMWC.2015.2422472

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title = "Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation",

abstract = "In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface potential formulation for charges and current. The model is tunable and applicable to any HEMT device.",

keywords = "HEMT, noise model, thermal noise",

author = "Avirup Dasgupta and Sourabh Khandelwal and Chauhan, {Yogesh Singh}",

year = "2015",

month = jun,

day = "1",

doi = "10.1109/LMWC.2015.2422472",

language = "English",

volume = "25",

pages = "376--378",

journal = "IEEE Microwave and Wireless Components Letters",

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publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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T1 - Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation

AU - Dasgupta, Avirup

AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface potential formulation for charges and current. The model is tunable and applicable to any HEMT device.

AB - In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface potential formulation for charges and current. The model is tunable and applicable to any HEMT device.

KW - HEMT

KW - noise model

KW - thermal noise

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U2 - 10.1109/LMWC.2015.2422472

DO - 10.1109/LMWC.2015.2422472

M3 - Article

AN - SCOPUS:84959510529

SN - 1531-1309

VL - 25

SP - 376

EP - 378

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 6

M1 - 7095620

ER -

Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation

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Keywords

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