Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation

Avirup Dasgupta, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface potential formulation for charges and current. The model is tunable and applicable to any HEMT device.

Original languageEnglish
Article number7095620
Pages (from-to)376-378
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume25
Issue number6
DOIs
Publication statusPublished - 1 Jun 2015
Externally publishedYes

    Fingerprint

Keywords

  • HEMT
  • noise model
  • thermal noise

Cite this