Surface-Potential-Based RF large signal model for Gallium Nitride HEMTs

S. Khandelwal; S. Ghosh; Y. S. Chauhan; B. Iniguez; T. A. Fjeldly

doi:10.1109/CSICS.2015.7314527

Surface-Potential-Based RF large signal model for Gallium Nitride HEMTs

S. Khandelwal, S. Ghosh, Y. S. Chauhan, B. Iniguez, T. A. Fjeldly

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

31 Citations (Scopus)

Abstract

We present a physics based large signal RF compact model for Gallium Nitride HEMTs (GaN HEMTs). This surface-potential-based model is called Advance SPICE Model for GaN HEMT or ASM-GaN-HEMT model. Surface-potential (SP) in the triangular quantum well of GaN HEMTs is derived by solving Schrodinger's and Poisson's equations consistently and analytically. Core analytical drain-current model is derived using the developed SP model and drift-diffusion transport. The core model is enhanced with models for key real device effects to represent a real GaN HEMT device. A consistent intrinsic charge model is also derived from SP. The developed model is implemented in Verilog-A. Excellent model agreement with DC, S-parameters and large signal RF power sweep measurements are shown for a GaN HEMT device with width W = 40 μm and number of fingers NF = 8.

Original language	English
Title of host publication	CSICS 2015
Subtitle of host publication	Proceedings of the 2015 IEEE Compound Semiconductor Integrated Circuit Symposium
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781479984947
DOIs	https://doi.org/10.1109/CSICS.2015.7314527
Publication status	Published - 30 Oct 2015
Externally published	Yes
Event	IEEE Compound Semiconductor Integrated Circuit Symposium (37th : 2015) - New Orleans, United States Duration: 11 Oct 2015 → 14 Oct 2015

Conference

Conference	IEEE Compound Semiconductor Integrated Circuit Symposium (37th : 2015)
Country/Territory	United States
City	New Orleans
Period	11/10/15 → 14/10/15

Keywords

AlGaN/GaN HEMTs
Compact models
Intermodulation distortion

Access to Document

10.1109/CSICS.2015.7314527

Cite this

@inproceedings{18666a39dded47098e1c73d4b396e05b,

title = "Surface-Potential-Based RF large signal model for Gallium Nitride HEMTs",

abstract = "We present a physics based large signal RF compact model for Gallium Nitride HEMTs (GaN HEMTs). This surface-potential-based model is called Advance SPICE Model for GaN HEMT or ASM-GaN-HEMT model. Surface-potential (SP) in the triangular quantum well of GaN HEMTs is derived by solving Schrodinger's and Poisson's equations consistently and analytically. Core analytical drain-current model is derived using the developed SP model and drift-diffusion transport. The core model is enhanced with models for key real device effects to represent a real GaN HEMT device. A consistent intrinsic charge model is also derived from SP. The developed model is implemented in Verilog-A. Excellent model agreement with DC, S-parameters and large signal RF power sweep measurements are shown for a GaN HEMT device with width W = 40 μm and number of fingers NF = 8.",

keywords = "AlGaN/GaN HEMTs, Compact models, Intermodulation distortion",

author = "S. Khandelwal and S. Ghosh and Chauhan, \{Y. S.\} and B. Iniguez and Fjeldly, \{T. A.\}",

year = "2015",

month = oct,

day = "30",

doi = "10.1109/CSICS.2015.7314527",

language = "English",

pages = "1--4",

booktitle = "CSICS 2015",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "IEEE Compound Semiconductor Integrated Circuit Symposium (37th : 2015) ; Conference date: 11-10-2015 Through 14-10-2015",

}

Khandelwal, S, Ghosh, S, Chauhan, YS, Iniguez, B & Fjeldly, TA 2015, Surface-Potential-Based RF large signal model for Gallium Nitride HEMTs. in CSICS 2015: Proceedings of the 2015 IEEE Compound Semiconductor Integrated Circuit Symposium. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, IEEE Compound Semiconductor Integrated Circuit Symposium (37th : 2015), New Orleans, United States, 11/10/15. https://doi.org/10.1109/CSICS.2015.7314527

Surface-Potential-Based RF large signal model for Gallium Nitride HEMTs. / Khandelwal, S.; Ghosh, S.; Chauhan, Y. S. et al.
CSICS 2015: Proceedings of the 2015 IEEE Compound Semiconductor Integrated Circuit Symposium. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Surface-Potential-Based RF large signal model for Gallium Nitride HEMTs

AU - Khandelwal, S.

AU - Ghosh, S.

AU - Chauhan, Y. S.

AU - Iniguez, B.

AU - Fjeldly, T. A.

PY - 2015/10/30

Y1 - 2015/10/30

N2 - We present a physics based large signal RF compact model for Gallium Nitride HEMTs (GaN HEMTs). This surface-potential-based model is called Advance SPICE Model for GaN HEMT or ASM-GaN-HEMT model. Surface-potential (SP) in the triangular quantum well of GaN HEMTs is derived by solving Schrodinger's and Poisson's equations consistently and analytically. Core analytical drain-current model is derived using the developed SP model and drift-diffusion transport. The core model is enhanced with models for key real device effects to represent a real GaN HEMT device. A consistent intrinsic charge model is also derived from SP. The developed model is implemented in Verilog-A. Excellent model agreement with DC, S-parameters and large signal RF power sweep measurements are shown for a GaN HEMT device with width W = 40 μm and number of fingers NF = 8.

AB - We present a physics based large signal RF compact model for Gallium Nitride HEMTs (GaN HEMTs). This surface-potential-based model is called Advance SPICE Model for GaN HEMT or ASM-GaN-HEMT model. Surface-potential (SP) in the triangular quantum well of GaN HEMTs is derived by solving Schrodinger's and Poisson's equations consistently and analytically. Core analytical drain-current model is derived using the developed SP model and drift-diffusion transport. The core model is enhanced with models for key real device effects to represent a real GaN HEMT device. A consistent intrinsic charge model is also derived from SP. The developed model is implemented in Verilog-A. Excellent model agreement with DC, S-parameters and large signal RF power sweep measurements are shown for a GaN HEMT device with width W = 40 μm and number of fingers NF = 8.

KW - AlGaN/GaN HEMTs

KW - Compact models

KW - Intermodulation distortion

UR - https://www.scopus.com/pages/publications/84962253032

U2 - 10.1109/CSICS.2015.7314527

DO - 10.1109/CSICS.2015.7314527

M3 - Conference proceeding contribution

AN - SCOPUS:84962253032

SP - 1

EP - 4

BT - CSICS 2015

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - IEEE Compound Semiconductor Integrated Circuit Symposium (37th : 2015)

Y2 - 11 October 2015 through 14 October 2015

ER -

Surface-Potential-Based RF large signal model for Gallium Nitride HEMTs

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this