A new large-signal HEMT drain current model is presented that accurately describes not only the AC gain and resistance of the device, but also their derivatives with respect to bias. This allows the accurate simulation of linear and nonlinear performance over bias. The model is scalable, and is shown to predict S-parameters, power compression characteristics and intermodulation distortion of devices and circuits over a range of frequencies, biases and device sizes.
|Title of host publication||Proceedings of the WARS2006 Conference|
|Place of Publication||Canberra|
|Publisher||National Committee Radio Service|
|Number of pages||9|
|Publication status||Published - 2006|
|Event||Workshop on the Applications of Radio Science (6th : 2006) - Leura, NSW|
Duration: 15 Feb 2006 → 17 Feb 2006
|Workshop||Workshop on the Applications of Radio Science (6th : 2006)|
|Period||15/02/06 → 17/02/06|
Brinkhoff, J., Parker, A. E., Mahon, S. J., & McCulloch, G. (2006). Symmetric HEMT drain current model for intermodulation distortion prediction. In P. Wilkinson (Ed.), Proceedings of the WARS2006 Conference Canberra: National Committee Radio Service.