Symmetric HEMT drain current model for intermodulation distortion prediction

James Brinkhoff, Anthony E. Parker, Simon J. Mahon, Gerry McCulloch

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    Abstract

    A new large-signal HEMT drain current model is presented that accurately describes not only the AC gain and resistance of the device, but also their derivatives with respect to bias. This allows the accurate simulation of linear and nonlinear performance over bias. The model is scalable, and is shown to predict S-parameters, power compression characteristics and intermodulation distortion of devices and circuits over a range of frequencies, biases and device sizes.
    Original languageEnglish
    Title of host publicationProceedings of the WARS2006 Conference
    EditorsPhil Wilkinson
    Place of PublicationCanberra
    PublisherNational Committee Radio Service
    Number of pages9
    ISBN (Print)0643093184
    Publication statusPublished - 2006
    EventWorkshop on the Applications of Radio Science (6th : 2006) - Leura, NSW
    Duration: 15 Feb 200617 Feb 2006

    Workshop

    WorkshopWorkshop on the Applications of Radio Science (6th : 2006)
    CityLeura, NSW
    Period15/02/0617/02/06

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