TY - JOUR
T1 - Synergistic effect of electron transport layer and colloidal quantum dot solid enable PbSe quantum dot solar cell achieving over 10 % efficiency
AU - Hu, Long
AU - Geng, Xun
AU - Singh, Simrjit
AU - Shi, Junjie
AU - Hu, Yicong
AU - Li, Shaoyuan
AU - Guan, Xinwei
AU - He, Tengyue
AU - Li, Xiaoning
AU - Cheng, Zhenxiang
AU - Patterson, Robert
AU - Huang, Shujuan
AU - Wu, Tom
PY - 2019/10
Y1 - 2019/10
N2 - PbSe colloidal quantum dots (CQDs) possess the advantages of efficient multiple exciton generation (MEG) and a larger Bohr exciton radius compared with PbS CQDs, suggesting that PbSe CQDs can enable superior charge carrier generation and transport in optoelectronic devices. However, the efficiency of PbSe CQD solar cell is generally much lower than that of the PbS counterpart. This is due to the much more research effort dedicated to PbS CQDs solar cells, where effective strategies of ligand exchange, device configuration and charge transport layer engineering have been developed. Here, we combined ligand exchange and charge transport layer engineering to optimize PbSe CQD solar cell performance. The PbSe CQD absorber layer was deposited via one-step ink method on SnO2 with an ultra-thin PCBM serving as a modification interlayer. The champion device with the structure of ITO/SnO2/PCBM/PbSe-PbI2/PbS-EDT/Au achieved a 10.4% efficiency, which to the best of our knowledge the highest efficiency reported to date for PbSe CQD solar cell. This work demonstrates that PbSe CQDs are very promising for next-generation solution-processed photovoltaic technology with low cost and high performance.
AB - PbSe colloidal quantum dots (CQDs) possess the advantages of efficient multiple exciton generation (MEG) and a larger Bohr exciton radius compared with PbS CQDs, suggesting that PbSe CQDs can enable superior charge carrier generation and transport in optoelectronic devices. However, the efficiency of PbSe CQD solar cell is generally much lower than that of the PbS counterpart. This is due to the much more research effort dedicated to PbS CQDs solar cells, where effective strategies of ligand exchange, device configuration and charge transport layer engineering have been developed. Here, we combined ligand exchange and charge transport layer engineering to optimize PbSe CQD solar cell performance. The PbSe CQD absorber layer was deposited via one-step ink method on SnO2 with an ultra-thin PCBM serving as a modification interlayer. The champion device with the structure of ITO/SnO2/PCBM/PbSe-PbI2/PbS-EDT/Au achieved a 10.4% efficiency, which to the best of our knowledge the highest efficiency reported to date for PbSe CQD solar cell. This work demonstrates that PbSe CQDs are very promising for next-generation solution-processed photovoltaic technology with low cost and high performance.
KW - PbSe quantum dot solar cell
KW - Phase transfer ligand exchange
KW - SnO₂
KW - PCBM layer
KW - Charge transport layer
UR - http://www.scopus.com/inward/record.url?scp=85069710871&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2019.103922
DO - 10.1016/j.nanoen.2019.103922
M3 - Article
AN - SCOPUS:85069710871
SN - 2211-2855
VL - 64
SP - 1
EP - 8
JO - Nano Energy
JF - Nano Energy
M1 - 103922
ER -