Abstract
We have studied the impact of threading dislocation density (TDD) on the performance of GaAs associated with the epitaxial growth on silicon (Si) substrate in either single-junction GaAs or dual-junction two-terminal GaAs/Si solar cell devices. The performance is measured under truncated spectrum due to the presence of internally lattice matched top GaInP filter with GaAs sub-cell. It is found that cell thickness is an important design parameter, with thinner active GaAs junctions required for single-junction design with higher TDD. Conversely, a thicker active GaAs junction is needed for dual-junction structure to ensure current matching with the bottom Si sub-cell. In addition, the homo-junction buffer layer or back surface field (BSF) improves the conversion efficiency for both structures, and most significantly for materials with higher TDD.
Original language | English |
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Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Number of pages | 4 |
ISBN (Electronic) | 9781479979448, 9781479979431 |
DOIs | |
Publication status | Published - 2015 |
Externally published | Yes |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |