The effect of growth temperature and V/III flux ratio of MOCVD antimony based semiconductors on growth rate and surface morphology

Ari Handono Ramelan; Sayekti Wahyuningsih; Ewa Goldys

doi:10.1051/matecconf/20179501005

The effect of growth temperature and V/III flux ratio of MOCVD antimony based semiconductors on growth rate and surface morphology

Ari Handono Ramelan, Sayekti Wahyuningsih, Ewa Goldys

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Abstract

Epitaxial Al_x Ga_1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-Type conductivity with smooth surface morphology.

Original language	English
Article number	01005
Pages (from-to)	1-4
Number of pages	4
Journal	MATEC Web of Conferences
Volume	95
DOIs	https://doi.org/10.1051/matecconf/20179501005
Publication status	Published - 2017
Event	International Conference on Mechatronics and Mechanical Engineering (ICMME 2016) (3rd : 2016) - Shanghai, China Duration: 21 Oct 2016 → 23 Oct 2016 Conference number: 3rd

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Copyright the Author(s) 2017. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

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title = "The effect of growth temperature and V/III flux ratio of MOCVD antimony based semiconductors on growth rate and surface morphology",

abstract = "Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-Type conductivity with smooth surface morphology.",

author = "Ramelan, {Ari Handono} and Sayekti Wahyuningsih and Ewa Goldys",

note = "Copyright the Author(s) 2017. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.; International Conference on Mechatronics and Mechanical Engineering (ICMME 2016) (3rd : 2016), ICMME 2016 ; Conference date: 21-10-2016 Through 23-10-2016",

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doi = "10.1051/matecconf/20179501005",

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T1 - The effect of growth temperature and V/III flux ratio of MOCVD antimony based semiconductors on growth rate and surface morphology

AU - Ramelan, Ari Handono

AU - Wahyuningsih, Sayekti

AU - Goldys, Ewa

N1 - Conference code: 3rd

PY - 2017

Y1 - 2017

N2 - Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-Type conductivity with smooth surface morphology.

AB - Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-Type conductivity with smooth surface morphology.

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DO - 10.1051/matecconf/20179501005

M3 - Conference paper

AN - SCOPUS:85013356882

VL - 95

SP - 1

EP - 4

JO - MATEC Web of Conferences

JF - MATEC Web of Conferences

SN - 2261-236X

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T2 - International Conference on Mechatronics and Mechanical Engineering (ICMME 2016) (3rd : 2016)

Y2 - 21 October 2016 through 23 October 2016

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The effect of growth temperature and V/III flux ratio of MOCVD antimony based semiconductors on growth rate and surface morphology

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