The effect of growth temperature and V/III flux ratio of MOCVD antimony based semiconductors on growth rate and surface morphology

Ari Handono Ramelan, Sayekti Wahyuningsih, Ewa Goldys

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Abstract

Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-Type conductivity with smooth surface morphology.

Original languageEnglish
Article number01005
Pages (from-to)1-4
Number of pages4
JournalMATEC Web of Conferences
Volume95
DOIs
Publication statusPublished - 2017
EventInternational Conference on Mechatronics and Mechanical Engineering (ICMME 2016) (3rd : 2016) - Shanghai, China
Duration: 21 Oct 201623 Oct 2016
Conference number: 3rd

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