Abstract
Dot size and density are important factors that determine the physical properties of semiconductor materials based on arrays of self-assembled dots (SADs). We report the effects of growth temperature on strained GaSb three-dimensional (3D) islands on GaAs grown by metalorganic chemical vapor deposition (MOCVD). In this work we use growth temperatures of 480°C, 500°C, 520°C, and 540°C. The results show decreasing dot widths as growth temperature increases. On the other hand, the dot densities generally increase. We believe that the increase in growth temperature increases adatom diffusion length and consequently leads to more extensive dots. However, fragmentation due to elastic relaxation appears to compensate at higher temperatures. As a result the dot density increases again, while average sizes fall.
Original language | English |
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Title of host publication | 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000 |
Place of Publication | Canberra |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 236-239 |
Number of pages | 4 |
Volume | 2000-January |
ISBN (Print) | 0780358147 |
DOIs | |
Publication status | Published - 2000 |
Event | 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: 3 Jul 2000 → 7 Jul 2000 |
Other
Other | 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 |
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Country/Territory | Australia |
City | Canberra |
Period | 3/07/00 → 7/07/00 |
Keywords
- Atomic force microscopy
- Gallium arsenide
- Laboratories
- MOCVD
- Quantum dot lasers
- Quantum dots
- Scanning electron microscopy
- Substrates
- Temperature
- US Department of Transportation