The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD

M. Motlan; E. M. Goldys; T. L. Tansley

doi:10.1109/SIM.2000.939234

The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD

M. Motlan, E. M. Goldys, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Dot size and density are important factors that determine the physical properties of semiconductor materials based on arrays of self-assembled dots (SADs). We report the effects of growth temperature on strained GaSb three-dimensional (3D) islands on GaAs grown by metalorganic chemical vapor deposition (MOCVD). In this work we use growth temperatures of 480°C, 500°C, 520°C, and 540°C. The results show decreasing dot widths as growth temperature increases. On the other hand, the dot densities generally increase. We believe that the increase in growth temperature increases adatom diffusion length and consequently leads to more extensive dots. However, fragmentation due to elastic relaxation appears to compensate at higher temperatures. As a result the dot density increases again, while average sizes fall.

Original language	English
Title of host publication	2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of Publication	Canberra
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	236-239
Number of pages	4
Volume	2000-January
ISBN (Print)	0780358147
DOIs	https://doi.org/10.1109/SIM.2000.939234
Publication status	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: 3 Jul 2000 → 7 Jul 2000

Other

Other	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	3/07/00 → 7/07/00

Keywords

Atomic force microscopy
Gallium arsenide
Laboratories
MOCVD
Quantum dot lasers
Quantum dots
Scanning electron microscopy
Substrates
Temperature
US Department of Transportation

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10.1109/SIM.2000.939234

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Motlan, M., Goldys, E. M., & Tansley, T. L. (2000). The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD. In 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000 (Vol. 2000-January, pp. 236-239). Article 939234 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SIM.2000.939234

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title = "The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD",

abstract = "Dot size and density are important factors that determine the physical properties of semiconductor materials based on arrays of self-assembled dots (SADs). We report the effects of growth temperature on strained GaSb three-dimensional (3D) islands on GaAs grown by metalorganic chemical vapor deposition (MOCVD). In this work we use growth temperatures of 480°C, 500°C, 520°C, and 540°C. The results show decreasing dot widths as growth temperature increases. On the other hand, the dot densities generally increase. We believe that the increase in growth temperature increases adatom diffusion length and consequently leads to more extensive dots. However, fragmentation due to elastic relaxation appears to compensate at higher temperatures. As a result the dot density increases again, while average sizes fall.",

keywords = "Atomic force microscopy, Gallium arsenide, Laboratories, MOCVD, Quantum dot lasers, Quantum dots, Scanning electron microscopy, Substrates, Temperature, US Department of Transportation",

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note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

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Motlan, M, Goldys, EM & Tansley, TL 2000, The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD. in 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. vol. 2000-January, 939234, Institute of Electrical and Electronics Engineers (IEEE), Canberra, pp. 236-239, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 3/07/00. https://doi.org/10.1109/SIM.2000.939234

The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD. / Motlan, M.; Goldys, E. M.; Tansley, T. L.
2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Vol. 2000-January Canberra: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 236-239 939234.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Tansley, T. L.

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N2 - Dot size and density are important factors that determine the physical properties of semiconductor materials based on arrays of self-assembled dots (SADs). We report the effects of growth temperature on strained GaSb three-dimensional (3D) islands on GaAs grown by metalorganic chemical vapor deposition (MOCVD). In this work we use growth temperatures of 480°C, 500°C, 520°C, and 540°C. The results show decreasing dot widths as growth temperature increases. On the other hand, the dot densities generally increase. We believe that the increase in growth temperature increases adatom diffusion length and consequently leads to more extensive dots. However, fragmentation due to elastic relaxation appears to compensate at higher temperatures. As a result the dot density increases again, while average sizes fall.

AB - Dot size and density are important factors that determine the physical properties of semiconductor materials based on arrays of self-assembled dots (SADs). We report the effects of growth temperature on strained GaSb three-dimensional (3D) islands on GaAs grown by metalorganic chemical vapor deposition (MOCVD). In this work we use growth temperatures of 480°C, 500°C, 520°C, and 540°C. The results show decreasing dot widths as growth temperature increases. On the other hand, the dot densities generally increase. We believe that the increase in growth temperature increases adatom diffusion length and consequently leads to more extensive dots. However, fragmentation due to elastic relaxation appears to compensate at higher temperatures. As a result the dot density increases again, while average sizes fall.

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KW - Gallium arsenide

KW - Laboratories

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KW - Quantum dot lasers

KW - Quantum dots

KW - Scanning electron microscopy

KW - Substrates

KW - Temperature

KW - US Department of Transportation

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BT - 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000

PB - Institute of Electrical and Electronics Engineers (IEEE)

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T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

Y2 - 3 July 2000 through 7 July 2000

ER -

The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD

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