The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD

M. Motlan, E. M. Goldys, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Dot size and density are important factors that determine the physical properties of semiconductor materials based on arrays of self-assembled dots (SADs). We report the effects of growth temperature on strained GaSb three-dimensional (3D) islands on GaAs grown by metalorganic chemical vapor deposition (MOCVD). In this work we use growth temperatures of 480°C, 500°C, 520°C, and 540°C. The results show decreasing dot widths as growth temperature increases. On the other hand, the dot densities generally increase. We believe that the increase in growth temperature increases adatom diffusion length and consequently leads to more extensive dots. However, fragmentation due to elastic relaxation appears to compensate at higher temperatures. As a result the dot density increases again, while average sizes fall.

Original languageEnglish
Title of host publication2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of PublicationCanberra
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages236-239
Number of pages4
Volume2000-January
ISBN (Print)0780358147
DOIs
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 3 Jul 20007 Jul 2000

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
CountryAustralia
CityCanberra
Period3/07/007/07/00

Keywords

  • Atomic force microscopy
  • Gallium arsenide
  • Laboratories
  • MOCVD
  • Quantum dot lasers
  • Quantum dots
  • Scanning electron microscopy
  • Substrates
  • Temperature
  • US Department of Transportation

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    Motlan, M., Goldys, E. M., & Tansley, T. L. (2000). The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD. In 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000 (Vol. 2000-January, pp. 236-239). [939234] Canberra: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SIM.2000.939234