The effect of target nitridation on structural properties of InN grown by radio-frequency reactive sputtering

Motlan, E. M. Goldys*, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The structure and composition of indium nitride (InN) films grown by radio frequency reactive sputtering as a function of target nitridation have been investigated. X-ray diffraction shows that the films are primarily polycrystalline with preferred (0 0 2) orientation indicating the c-axis of the hexagonal InN structure perpendicular to the substrate. Scanning electron microscopy shows that films grown from non-nitrided targets are characterised by smaller grain size and rougher surfaces, with no observable structure. Films grown with pre-nitrided targets have a continuous columnar morphology with relatively even surfaces. X-ray photoelectron spectroscopy and Rutherford backscattering techniques were used to quantify the amounts of In, N and O contents.

Original languageEnglish
Pages (from-to)28-32
Number of pages5
JournalThin Solid Films
Volume422
Issue number1-2
DOIs
Publication statusPublished - 20 Dec 2002

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