The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

H. Y. Zuo*, B. Zhou, E. M. Goldys, M. Paterson, T. L. Tansley

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Low temperature GaN thin films are grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by laser and plasma enhanced metal-organic chemical vapor deposition. The pre-growth conditions include deposition of buffer layers and surface hydrogenation. The films have hexagonal structure and are polycrystalline. These preliminary results do not indicate any significant change in GaN films grown on different substrates and under varied growth conditions.

Original languageEnglish
Title of host publicationConference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
EditorsC. Jagadish
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages406-409
Number of pages4
ISBN (Electronic)0780333756
ISBN (Print)0780333748
DOIs
Publication statusPublished - Dec 1996
EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
Duration: 8 Dec 199611 Dec 1996

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
CityCanberra, Aust
Period8/12/9611/12/96

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