The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

H. Y. Zuo; B. Zhou; E. M. Goldys; M. Paterson; T. L. Tansley

doi:10.1109/COMMAD.1996.610153

The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

H. Y. Zuo^*, B. Zhou, E. M. Goldys, M. Paterson, T. L. Tansley

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Low temperature GaN thin films are grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by laser and plasma enhanced metal-organic chemical vapor deposition. The pre-growth conditions include deposition of buffer layers and surface hydrogenation. The films have hexagonal structure and are polycrystalline. These preliminary results do not indicate any significant change in GaN films grown on different substrates and under varied growth conditions.

Original language	English
Title of host publication	Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
Editors	C. Jagadish
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	406-409
Number of pages	4
ISBN (Electronic)	0780333756
ISBN (Print)	0780333748
DOIs	https://doi.org/10.1109/COMMAD.1996.610153
Publication status	Published - Dec 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	8/12/96 → 11/12/96

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10.1109/COMMAD.1996.610153

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Zuo, H. Y., Zhou, B., Goldys, E. M., Paterson, M., & Tansley, T. L. (1996). The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD. In C. Jagadish (Ed.), Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 406-409). Article 610153 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.1996.610153

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title = "The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD",

abstract = "Low temperature GaN thin films are grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by laser and plasma enhanced metal-organic chemical vapor deposition. The pre-growth conditions include deposition of buffer layers and surface hydrogenation. The films have hexagonal structure and are polycrystalline. These preliminary results do not indicate any significant change in GaN films grown on different substrates and under varied growth conditions.",

author = "Zuo, {H. Y.} and B. Zhou and Goldys, {E. M.} and M. Paterson and Tansley, {T. L.}",

year = "1996",

month = dec,

doi = "10.1109/COMMAD.1996.610153",

language = "English",

isbn = "0780333748",

pages = "406--409",

editor = "C. Jagadish",

booktitle = "Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Zuo, HY, Zhou, B, Goldys, EM, Paterson, M & Tansley, TL 1996, The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD. in C Jagadish (ed.), Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD., 610153, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 406-409, Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 8/12/96. https://doi.org/10.1109/COMMAD.1996.610153

The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD. / Zuo, H. Y.; Zhou, B.; Goldys, E. M. et al.
Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. ed. / C. Jagadish. Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE), 1996. p. 406-409 610153.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AB - Low temperature GaN thin films are grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by laser and plasma enhanced metal-organic chemical vapor deposition. The pre-growth conditions include deposition of buffer layers and surface hydrogenation. The films have hexagonal structure and are polycrystalline. These preliminary results do not indicate any significant change in GaN films grown on different substrates and under varied growth conditions.

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SN - 0780333748

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BT - Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD

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PB - Institute of Electrical and Electronics Engineers (IEEE)

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T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

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Zuo HY, Zhou B, Goldys EM, Paterson M, Tansley TL. The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD. In Jagadish C, editor, Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE). 1996. p. 406-409. 610153 doi: 10.1109/COMMAD.1996.610153

The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

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