TY - JOUR
T1 - The local-field corrective effect on Rabi oscillation of ultrashort pulse excitation in semiconductor GaAs
AU - Luo, Jian
AU - Xia, Keyu
AU - Niu, Yueping
AU - Gong, Shangqing
PY - 2008/6
Y1 - 2008/6
N2 - The Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2 few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2 pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.
AB - The Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2 few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2 pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.
UR - http://www.scopus.com/inward/record.url?scp=45849096846&partnerID=8YFLogxK
U2 - 10.1080/09500340701765774
DO - 10.1080/09500340701765774
M3 - Article
AN - SCOPUS:45849096846
SN - 0950-0340
VL - 55
SP - 1713
EP - 1722
JO - Journal of Modern Optics
JF - Journal of Modern Optics
IS - 11
ER -