The local-field corrective effect on Rabi oscillation of ultrashort pulse excitation in semiconductor GaAs

Jian Luo*, Keyu Xia, Yueping Niu, Shangqing Gong

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2 few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2 pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.

Original languageEnglish
Pages (from-to)1713-1722
Number of pages10
JournalJournal of Modern Optics
Volume55
Issue number11
DOIs
Publication statusPublished - Jun 2008

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