The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

A. Afifuddin, K. S A Butcher, T. L. Tansley, H. Timmers, R. G. Elliman, T. D M Weijers, T. R. Ophel

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

4 Citations (Scopus)

Abstract

GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.

Original languageEnglish
Title of host publication2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of PublicationCanberra
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages51-54
Number of pages4
Volume2000-January
ISBN (Print)0780358147
DOIs
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 3 Jul 20007 Jul 2000

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
CountryAustralia
CityCanberra
Period3/07/007/07/00

Keywords

  • Chemical lasers
  • Chemical vapor deposition
  • Conductivity
  • Gallium nitride
  • Gold
  • Optical films
  • Particle beam optics
  • Plasma chemistry
  • Plasma properties
  • Silicon

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