The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

A. Afifuddin; K. S A Butcher; T. L. Tansley; H. Timmers; R. G. Elliman; T. D M Weijers; T. R. Ophel

doi:10.1109/SIM.2000.939196

The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

A. Afifuddin, K. S A Butcher, T. L. Tansley, H. Timmers, R. G. Elliman, T. D M Weijers, T. R. Ophel

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.

Original language	English
Title of host publication	2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of Publication	Canberra
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	51-54
Number of pages	4
Volume	2000-January
ISBN (Print)	0780358147
DOIs	https://doi.org/10.1109/SIM.2000.939196
Publication status	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: 3 Jul 2000 → 7 Jul 2000

Other

Other	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	3/07/00 → 7/07/00

Keywords

Chemical lasers
Chemical vapor deposition
Conductivity
Gallium nitride
Gold
Optical films
Particle beam optics
Plasma chemistry
Plasma properties
Silicon

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10.1109/SIM.2000.939196

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Afifuddin, A., Butcher, K. S. A., Tansley, T. L., Timmers, H., Elliman, R. G., Weijers, T. D. M., & Ophel, T. R. (2000). The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation. In 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000 (Vol. 2000-January, pp. 51-54). Article 939196 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SIM.2000.939196

Afifuddin, A. ; Butcher, K. S A ; Tansley, T. L. et al. / The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation. 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Vol. 2000-January Canberra : Institute of Electrical and Electronics Engineers (IEEE), 2000. pp. 51-54

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title = "The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation",

abstract = "GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.",

keywords = "Chemical lasers, Chemical vapor deposition, Conductivity, Gallium nitride, Gold, Optical films, Particle beam optics, Plasma chemistry, Plasma properties, Silicon",

author = "A. Afifuddin and Butcher, {K. S A} and Tansley, {T. L.} and H. Timmers and Elliman, {R. G.} and Weijers, {T. D M} and Ophel, {T. R.}",

year = "2000",

doi = "10.1109/SIM.2000.939196",

language = "English",

isbn = "0780358147",

volume = "2000-January",

pages = "51--54",

booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

}

Afifuddin, A, Butcher, KSA, Tansley, TL, Timmers, H, Elliman, RG, Weijers, TDM & Ophel, TR 2000, The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation. in 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. vol. 2000-January, 939196, Institute of Electrical and Electronics Engineers (IEEE), Canberra, pp. 51-54, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 3/07/00. https://doi.org/10.1109/SIM.2000.939196

The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation. / Afifuddin, A.; Butcher, K. S A; Tansley, T. L. et al.
2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Vol. 2000-January Canberra: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 51-54 939196.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

AU - Afifuddin, A.

AU - Butcher, K. S A

AU - Tansley, T. L.

AU - Timmers, H.

AU - Elliman, R. G.

AU - Weijers, T. D M

AU - Ophel, T. R.

PY - 2000

Y1 - 2000

N2 - GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.

AB - GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.

KW - Chemical lasers

KW - Chemical vapor deposition

KW - Conductivity

KW - Gallium nitride

KW - Gold

KW - Optical films

KW - Particle beam optics

KW - Plasma chemistry

KW - Plasma properties

KW - Silicon

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U2 - 10.1109/SIM.2000.939196

DO - 10.1109/SIM.2000.939196

M3 - Conference proceeding contribution

AN - SCOPUS:84950137055

SN - 0780358147

VL - 2000-January

SP - 51

EP - 54

BT - 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Canberra

T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

Y2 - 3 July 2000 through 7 July 2000

ER -

Afifuddin A, Butcher KSA, Tansley TL, Timmers H, Elliman RG, Weijers TDM et al. The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation. In 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Vol. 2000-January. Canberra: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 51-54. 939196 doi: 10.1109/SIM.2000.939196

The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

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