The properties of ion implanted InGaAs single quantum-well semiconductor saturable absorber mirrors (SESAM) for passive modelocking were investigated. A low-finesse vertical cavity design was chosen to minimize non-bleachable losses and saturation fluence of the SESAM. The implanted device allowed operation below the damage threshold because of its picosecond response and low saturation fluence. An implantation and annealing induced quantum well intermixing effect was found to be present in the SESAM resulting in a blue shift and broadening in the excitonic feature.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|Publication status||Published - 2001|