The properties of ion-implanted InGaAs single quantum-well semiconductor saturable absorber mirrors for passive mode-locking

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, C. Jagadish, B. Taylor, J. Dawes, J. Piper

Research output: Contribution to journalArticle

2 Citations (Scopus)
13 Downloads (Pure)

Abstract

The properties of ion implanted InGaAs single quantum-well semiconductor saturable absorber mirrors (SESAM) for passive modelocking were investigated. A low-finesse vertical cavity design was chosen to minimize non-bleachable losses and saturation fluence of the SESAM. The implanted device allowed operation below the damage threshold because of its picosecond response and low saturation fluence. An implantation and annealing induced quantum well intermixing effect was found to be present in the SESAM resulting in a blue shift and broadening in the excitonic feature.

Original languageEnglish
Pages (from-to)790-791
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
DOIs
Publication statusPublished - 2001

Bibliographical note

Copyright 2001 IEEE. Reprinted from LEOS 2001 : 2001 IEEE/LEOS annual meeting conference proceedings : the 14th annual meeting of the IEEE Lasers and Electro-Optics Society, 11-15 November 2001, Hyatt Regency, La Jolla, San Diego, CA. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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