Thermal activated carrier transfer between InAs quantum dots in very low density samples

J. P. Martinez-Pastor*, G. Munoz-Matutano, Benito Alen, J. Canet-Ferrer, D. Fuster, G. Trevisi, L. Seravalli, P. Frigeri, Secondo Franchi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/mu m(2). We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.

Original languageEnglish
Title of host publication11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11)
EditorsL Vina, C Tejedor, JM Calleja
Place of PublicationUK
PublisherIOP Publishing
Number of pages5
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event11th International Conference on Optics of Excitons in Confined Systems - Cantoblanco, Spain
Duration: 7 Sept 200911 Sept 2009

Publication series

NameJournal of Physics Conference Series
PublisherIOP PUBLISHING LTD
Volume210
ISSN (Print)1742-6588

Conference

Conference11th International Conference on Optics of Excitons in Confined Systems
Country/TerritorySpain
CityCantoblanco
Period7/09/0911/09/09

Keywords

  • EMISSION
  • PAIRS

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