Thermal annealing of liquid phase epitaxial gallium arsenide

D. Alexiev*, K. S. A. Butcher, M. Edmondson, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

1 Citation (Scopus)

Abstract

Thermal annealing of n-type liquid phase epitaxial gallium arsenide is examined. It is shown that low 1015 cm-3 n-type electrically active impurity levels can be reduced to 3 × 1013 cm-3 by long term annealing. Conversely, it is also shown that p-type liquid phase epitaxial (LPE) gallium arsenide when thermally annealed will show an increase in the net acceptor density. A mechanism for this effect is proposed.

Original languageEnglish
Pages (from-to)367-369
Number of pages3
JournalJournal of Crystal Growth
Volume135
Issue number1-2
DOIs
Publication statusPublished - Jan 1994

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