Thermal annealing of liquid phase epitaxial gallium arsenide

D. Alexiev; K. S. A. Butcher; M. Edmondson; T. L. Tansley

doi:10.1016/0022-0248(94)90765-X

Thermal annealing of liquid phase epitaxial gallium arsenide

D. Alexiev^*, K. S. A. Butcher, M. Edmondson, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

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Abstract

Thermal annealing of n-type liquid phase epitaxial gallium arsenide is examined. It is shown that low 10¹⁵ cm^-3 n-type electrically active impurity levels can be reduced to 3 × 10¹³ cm^-3 by long term annealing. Conversely, it is also shown that p-type liquid phase epitaxial (LPE) gallium arsenide when thermally annealed will show an increase in the net acceptor density. A mechanism for this effect is proposed.

Original language	English
Pages (from-to)	367-369
Number of pages	3
Journal	Journal of Crystal Growth
Volume	135
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(94)90765-X
Publication status	Published - Jan 1994

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title = "Thermal annealing of liquid phase epitaxial gallium arsenide",

abstract = "Thermal annealing of n-type liquid phase epitaxial gallium arsenide is examined. It is shown that low 1015 cm-3 n-type electrically active impurity levels can be reduced to 3 × 1013 cm-3 by long term annealing. Conversely, it is also shown that p-type liquid phase epitaxial (LPE) gallium arsenide when thermally annealed will show an increase in the net acceptor density. A mechanism for this effect is proposed.",

author = "D. Alexiev and Butcher, {K. S. A.} and M. Edmondson and Tansley, {T. L.}",

year = "1994",

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doi = "10.1016/0022-0248(94)90765-X",

language = "English",

volume = "135",

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T1 - Thermal annealing of liquid phase epitaxial gallium arsenide

AU - Alexiev, D.

AU - Butcher, K. S. A.

AU - Edmondson, M.

AU - Tansley, T. L.

PY - 1994/1

Y1 - 1994/1

N2 - Thermal annealing of n-type liquid phase epitaxial gallium arsenide is examined. It is shown that low 1015 cm-3 n-type electrically active impurity levels can be reduced to 3 × 1013 cm-3 by long term annealing. Conversely, it is also shown that p-type liquid phase epitaxial (LPE) gallium arsenide when thermally annealed will show an increase in the net acceptor density. A mechanism for this effect is proposed.

AB - Thermal annealing of n-type liquid phase epitaxial gallium arsenide is examined. It is shown that low 1015 cm-3 n-type electrically active impurity levels can be reduced to 3 × 1013 cm-3 by long term annealing. Conversely, it is also shown that p-type liquid phase epitaxial (LPE) gallium arsenide when thermally annealed will show an increase in the net acceptor density. A mechanism for this effect is proposed.

UR - http://www.scopus.com/inward/record.url?scp=43949150441&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)90765-X

DO - 10.1016/0022-0248(94)90765-X

M3 - Letter

AN - SCOPUS:43949150441

SN - 0022-0248

VL - 135

SP - 367

EP - 369

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Thermal annealing of liquid phase epitaxial gallium arsenide

Abstract

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