Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements

Oya Sevimli*, Anthony E. Parker, Anthony P. Fattorini, James T. Harvey

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

3 Citations (Scopus)

Abstract

Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impedance to a compact nonlinear transistor model. We developed thermal impedance parameters that can be scaled for multi-finger devices, using the measured low frequency s-parameters of 1, 2, 4, and 6-finger transistors. The model gave very good fit to the measurements at all bias points.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC 2011
Place of PublicationBarton, A.C.T
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1242-1245
Number of pages4
ISBN (Print)9780858259744
Publication statusPublished - 2011
EventAsia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
Duration: 5 Dec 20118 Dec 2011

Publication series

NameAsia Pacific Microwave Conference-Proceedings
PublisherIEEE

Other

OtherAsia-Pacific Microwave Conference, APMC 2011
CountryAustralia
CityMelbourne, VIC
Period5/12/118/12/11

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