Thermal modelling of multifinger GaAs/GaN FETs using SPICE

Jabra Tarazi, Anthony E. Parker, Bryan Schwitter, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)


A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.

Original languageEnglish
Title of host publicationAMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Electronic)9781479955411
Publication statusPublished - 20 Jan 2014
Event1st Australian Microwave Symposium AMS - Melbourne, Australia
Duration: 26 Jun 201427 Jun 2014


Conference1st Australian Microwave Symposium AMS


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