Thermal modelling of multifinger GaAs/GaN FETs using SPICE

Jabra Tarazi; Anthony E. Parker; Bryan Schwitter; Simon J. Mahon

doi:10.1109/AUSMS.2014.7017339

Thermal modelling of multifinger GaAs/GaN FETs using SPICE

Jabra Tarazi, Anthony E. Parker, Bryan Schwitter, Simon J. Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.

Original language	English
Title of host publication	AMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	7-8
Number of pages	2
ISBN (Electronic)	9781479955411
DOIs	https://doi.org/10.1109/AUSMS.2014.7017339
Publication status	Published - 20 Jan 2014
Event	1st Australian Microwave Symposium AMS - Melbourne, Australia Duration: 26 Jun 2014 → 27 Jun 2014

Conference

Conference	1st Australian Microwave Symposium AMS
Country/Territory	Australia
City	Melbourne
Period	26/06/14 → 27/06/14

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10.1109/AUSMS.2014.7017339

Cite this

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title = "Thermal modelling of multifinger GaAs/GaN FETs using SPICE",

abstract = "A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.",

author = "Jabra Tarazi and Parker, {Anthony E.} and Bryan Schwitter and Mahon, {Simon J.}",

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doi = "10.1109/AUSMS.2014.7017339",

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booktitle = "AMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings",

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Tarazi, J, Parker, AE, Schwitter, B & Mahon, SJ 2014, Thermal modelling of multifinger GaAs/GaN FETs using SPICE. in AMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings., 7017339, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 7-8, 1st Australian Microwave Symposium AMS, Melbourne, Victoria, Australia, 26/06/14. https://doi.org/10.1109/AUSMS.2014.7017339

Thermal modelling of multifinger GaAs/GaN FETs using SPICE. / Tarazi, Jabra; Parker, Anthony E.; Schwitter, Bryan et al.
AMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 7-8 7017339.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AB - A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.

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BT - AMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings

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ER -

Thermal modelling of multifinger GaAs/GaN FETs using SPICE

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